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US 12,027,589 B2Granted
Semiconductor device including graphene and method of manufacturing the semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsKeunwook Shin, Hyeonjin Shin, Yeonchoo Cho, Seunggeol Nam, Seongjun Park, Yunseong Lee
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Abstract
Provided is a semiconductor device including graphene. The semiconductor device includes: a substrate including an insulator and a semiconductor; and a graphene layer configured to directly grow only on a surface of the semiconductor, wherein the semiconductor includes at least one of a group IV material and a group III-V compound.
Claims12
A semiconductor device comprising:
- a substrate including an insulator and a semiconductor, the insulator on a surface of the substrate and exposing an upper surface of the semiconductor such that an upper surface of the insulator and the upper surface of the semiconductor are exposed in the same direction and are coplanar;
- and
- a graphene layer directly grown only on the upper surface of the semiconductor such that the graphene layer has a hexagonal honeycomb structure extending in parallel to the upper surface of the semiconductor on which the graphene layer is grown and parallel to the surface of the substrate,
- wherein the semiconductor includes at least one of a group IV material or a group III-V compound, and
- wherein the graphene layer is not grown by epitaxial growth.
2 more elements
A semiconductor device comprising:
- a substrate including an insulator and a semiconductor;
- a first graphene layer directly grown only on an upper surface of the semiconductor;
- and
- a second graphene layer directly grown only on an upper surface of the insulator,
- wherein a thickness of the first graphene layer is greater than a thickness of the second graphene layer,
- wherein the upper surface of the insulator and the upper surface of the semiconductor are exposed in the same direction, and
- wherein the upper surface of the insulator and the upper surface of the semiconductor are coplanar,
- wherein the first graphene layer and the second graphene layer are not grown by epitaxial growth.
5 more elements
Dependencies are inferred from the claim text.