H10P 14/2908
Nitrides
Official title: {Nitrides}
H10P14/2908 (Nitrides) appears on 880 US grants and 1,106 published applications in this corpus.
Search patents in H10P- Granted patents
- 880
- Published applications
- 1,106
- Assignees
- 335
- Inventors
- 1,494
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 3 | 0 |
| 1999 | 0 | 0 |
| 2000 | 2 | 0 |
| 2001 | 5 | 7 |
| 2002 | 12 | 22 |
| 2003 | 10 | 14 |
| 2004 | 13 | 12 |
| 2005 | 11 | 24 |
| 2006 | 8 | 32 |
| 2007 | 8 | 27 |
| 2008 | 19 | 36 |
| 2009 | 18 | 42 |
| 2010 | 36 | 65 |
| 2011 | 42 | 72 |
| 2012 | 47 | 49 |
| 2013 | 38 | 55 |
| 2014 | 62 | 61 |
| 2015 | 48 | 53 |
| 2016 | 50 | 45 |
| 2017 | 57 | 45 |
| 2018 | 46 | 59 |
| 2019 | 55 | 67 |
| 2020 | 63 | 63 |
| 2021 | 45 | 61 |
| 2022 | 35 | 56 |
| 2023 | 48 | 56 |
| 2024 | 46 | 41 |
| 2025 | 33 | 26 |
| 2026 | 18 | 16 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Group-III element nitride semiconductor substrate25 Aug 2026US 12,721,056 B2NGK Insulators, Ltd.
- Semiconductor device structure and manufacturing method thereof4 Aug 2026US 12,701,932 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Devices having and methods of forming thermally conductive substrates4 Aug 2026US 12,702,001 B2Akash Systems, Inc.
- Transistor structure and methods of forming the same21 Jul 2026US 12,690,398 B2Massachusetts Institute of Technology
- Group-III element nitride semiconductor substrate14 Jul 2026US 12,685,040 B2NGK Insulators, Ltd.
- Semiconductor device structure and manufacturing method thereof8 Oct 2026US 2026/0314277 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Group iii nitride semiconductor epitaxial wafer and electronic device1 Oct 2026US 2026/0304875 A1Panasonic Holdings Corporation
- High quality group-iii metal nitride crystals, methods of making, and methods of use20 Aug 2026US 2026/0247878 A1KYOCERA Corporation
- Gallium arsenide single crystal substrate and method of producing same30 Jul 2026US 2026/0218416 A1Sumitomo Electric Industries, Ltd.
- Uniform And Controllable Silicone Doping Of Aluminum Nitride30 Jul 2026US 2026/0218418 A1The Regents of the University of Michigan
Most cited
By later US patents
- Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD)274US 7,338,828 B2Japan Science and Technology Agency · 2008
- Nitride semiconductor wafer273US 7,390,359 B2Sumitomo Electric Industries, Ltd. · 2008
- Group-III nitride light-emitting device251US 7,968,864 B2Sumitomo Electric Industries, Ltd. · 2011
- III-V nitride substrate boule and method of making and using the same249US 6,596,079 B1Advanced Technology Materials, Inc. · 2003
- Thin film deposition method of nitride semiconductor and nitride semiconductor light emitting device248US 6,920,166 B2Nippon Telegraph and Telephone Corporation · 2005