Transistor structure and methods of forming the same
AssigneeMassachusetts Institute of Technology
InventorsTomás A. Palacios, Qingyun Xie, John Prakash Niroula, Pao-Chuan Shih, Gillian Micale
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Abstract
Provided is an epitaxial design/structure and transistor platform for a III-N transistor/chip incorporating a backside conductive/metal layer. The backside metal may serve several functions in the transistor/chip, including serving as a back gate, a field plate, and an electrode to deliver power to the devices and circuits, for example, as part of a backside power delivery network (BSPDN). Also provided are methods of preparing/fabricating the epitaxial design/structure and transistor platform described herein.
Claims13
A method of forming an epitaxial structure comprising:
- forming a buffer layer on a substrate;
- forming a first etch stop layer on the buffer layer;
- forming a first cap layer on the first etch stop layer;
- forming a second etch stop layer on the first cap layer;
- forming a first polarization charge-inducer/barrier layer on the second etch stop layer;
- forming a channel on the first charge-inducer/barrier layer;
- forming a second polarization charge-inducer/barrier layer on the channel;
- and
- forming a second cap layer on the second polarization charge-inducer/barrier layer,
- wherein the buffer layer, first etch stop layer, first cap layer, second etch stop layer, first polarization charge-inducer/barrier layer, channel, second polarization charge-inducer/barrier layer, and second cap layer are grown in the metal/top face on top of the substrate, and:
- depositing and patterning a conductive layer on the second polarization charge-inducer/barrier layer;
- forming a bonding dielectric on the patterned conductive layer,
- to provide a structure wherein the bonding dielectric is at the top of the structure, followed by:
- orienting the structure so that the bonding dielectric and the patterned conductive layer are at the bottom of the structure, and the substrate is at the top of the structure;
- removing the substrate and buffer layer;
- forming source and drain electrodes on opposing sides of the channel;
- and
- forming a gate electrode/top gate on top of the channel,
- wherein at least one layer in the epitaxial structure is grown epitaxially, to provide the epitaxial structure.
A method of forming an epitaxial structure comprising:
- a) forming a buffer layer on a substrate;
- b) forming a channel on the buffer layer
- c) forming a polarization charge-inducer/barrier layer on the channel;
- wherein the buffer layer, channel, and polarization charge-inducer/barrier layer are grown in the metal/top face on top of the substrate, followed by:
- d) depositing and patterning a conductive layer on the polarization charge-inducer/barrier layer;
- e) forming a bonding dielectric on the patterned conductive,
- to provide a structure wherein the bonding dielectric is at the top of the structure, followed by:
- f) orienting the epitaxial structure so that the bonding dielectric and the patterned conductive layer are at the bottom of the structure, and the substrate is at the top of the structure;
- g) removing the substrate and buffer layer;
- h) forming source and drain electrodes on opposing sides of the channel;
- i) forming a gate electrode/top gate on top of the channel, wherein at least one layer in the epitaxial structure is grown epitaxially, to provide the epitaxial structure;
- and
- bonding a mechanical wafer to the bonding dielectric before or after orienting the epitaxial structure so that the bonding dielectric and the patterned conductive layer are at the bottom of the structure.
Dependencies are inferred from the claim text.