Nitride semiconductor wafer
AssigneeSumitomo Electric Industries, Ltd.
InventorsMichimasa Miyanaga, Koji Uematsu, Takuji Okahisa
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Abstract
A nitride semiconductor substrate having properties preferable for the manufacture of various nitride semiconductor devices is made available, by specifying or controlling the local variation in the off-axis angle of the principal surface of the nitride semiconductor substrate. In a nitride semiconductor single-crystal wafer having a flat principal surface, the crystallographic plane orientation of the principal surface of the nitride semiconductor single-crystal wafer varies locally within a predetermined angular range.
Claims6
A misoriented nitride semiconductor single-crystal wafer having a flat principal surface, the wafer manufactured to have a non-continuous variation Δθ in off-axis angle such that from region to region across the principal surface, Δθ differs within a predetermined angular range.
Dependencies are inferred from the claim text.