Group-III nitride light-emitting device

A group-III nitride light-emitting device comprising:

• a group-III nitride substrate;
• a gallium nitride based semiconductor region grown on the group-III nitride substrate;
• an active layer grown on a basal plane of the gallium nitride based semiconductor region in such a way as to have an emission peak wavelength of 410 nm or more,
• wherein the active layer includes a quantum well structure in which well layers and barrier layers are arranged alternately,
• the thickness of the well layer is 4 nm or more, and 10 nm or less,
• the well layer is composed of InXGa1-XN (0.15≦X<1, where X is a strained composition),
• the barrier layer is composed of InYGa1-YN (0≦Y≦0.05, Y<X, where Y is a strained composition), and
• the basal plane is a semipolar plane inclined at an inclination angle within the range of 15 degrees or more, and 85 degrees or less with reference to a {0001} plane or a {000-1} plane;
• a p-type gallium nitride based semiconductor region grown on the active layer;
• and
• a first electrode disposed on the p-type gallium nitride based semiconductor region,
• wherein the gallium nitride based semiconductor region grown on the group-III nitride substrate has n-type conductivity,
• the basal plane of the group-III nitride substrate is inclined at an inclination angle within the range of 15 degrees or more, and 85 degrees or less with reference to the {0001} plane or the {000-1} plane,
• the gallium nitride based semiconductor region, the active layer, and the p-type gallium nitride based semiconductor region are located on the basal plane of the group-III nitride substrate in that order from the group-III nitride substrate, and
• the group-III nitride substrate is composed of InSAlTGa1-S-TN (0≦S≦1, 0≦T≦1, and 0≦S+T≦1).