Thin film deposition method of nitride semiconductor and nitride semiconductor light emitting device
AssigneeNippon Telegraph and Telephone Corporation
InventorsTetsuya Akasaka, Seigo Ando, Toshio Nishida, Naoki Kobayashi, Tadashi Saitoh
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Abstract
A masking material 13, which includes stripe-like openings 12 parallel to the [1-100] direction of a nitride semiconductor thin film, is formed on a substrate. Nitride semiconductor thin films 11 doped with Mg are grown on the openings 12 by selective-area growth. The nitride semiconductor thin films 11 are composed of a portion 14 formed as a result of the growth in the direction perpendicular to a (0001) principal plane, and a portion 15 formed as a result of the growth of {11-2x} facets (x=0, 1, 2). The Mg concentration of the portion 15 is made lower than that of the portion 14.
Claims20
A thin film deposition method of forming thin films on a substrate by selective-area growth of a nitride semiconductor whose principal orientation plane is a (0001) plane, said thin film deposition method comprising the steps of:
- forming on a principal orientation plane of said substrate a masking material including stripe-like openings parallel to a [1-100] direction of a nitride semiconductor to be grown by selective-area growth, or polygon-like openings whose side is parallel to a [1-100] direction of a nitride semiconductor thin film to be grown by selective-area growth, to expose part of the principal orientation plane of said substrate;
- growing nitride semiconductor thin films on the opening region by selective-area growth by vapor phase growth using a gas containing a metallic magnesium or a magnesium compound, said nitride semiconductor thin films including a first nitride semiconductor crystal portion formed as a result of growth in the direction perpendicular to the (0001) principal plane and a second nitride semiconductor crystal portion formed as a result of growth of {11−2x} (x=0, 1, 2) facets;
- and
- making Mg concentration of said second nitride semiconductor crystal portion lower than that of said first nitride semiconductor crystal portion.
A thin film deposition method of forming thin films on a substrate by selective-area growth of a nitride semiconductor whose principal orientation plane is a (0001) plane, said thin film deposition method comprising the steps of:
- forming on a principal orientation plane of said substrate a masking material including stripe-like openings parallel to a [11-20] direction of a nitride semiconductor to be grown by selective-area growth, or polygon-like openings whose side is parallel to a [11-20] direction of a nitride semiconductor thin film to be grown by selective-area growth, to expose part of the principal orientation plane of said substrate;
- growing nitride semiconductor thin films on the opening region by selective-area growth by vapor phase growth using a gas containing a metallic magnesium or a magnesium compound, said nitride semiconductor thin films including a first nitride semiconductor crystal portion formed as a result of growth in the direction perpendicular to the (0001) principal plane and a second nitride semiconductor crystal portion formed as a result of growth of {1−10x} (x=0, 1) facets;
- and
- making Mg concentration of said second nitride semiconductor crystal portion lower than that of said first nitride semiconductor crystal portion.
A thin film deposition method of forming thin films on a substrate by selective-area growth of a nitride semiconductor whose principal orientation plane is a (0001) plane, said thin film deposition method comprising the steps of:
- forming on a principal orientation plane of said substrate a stripe-like nitride semiconductor base layer that is parallel to a [1-100] direction of a nitride semiconductor to be grown by selective-area growth and has a (0001) plane as a principal orientation plane, or a polygon-like nitride semiconductor base layer whose side is parallel to a [1-100] direction of nitride semiconductors to be grown by selective-area growth and which has a (0001) plane as a principal orientation plane;
- growing nitride semiconductor thin films on the principal orientation plane and side facets of said nitride semiconductor base layer by selective-area growth by vapor phase growth using a gas containing a metallic magnesium or a magnesium compound, said nitride semiconductor thin films including a first nitride semiconductor crystal portion formed as a result of growth in the direction perpendicular to the (0001) principal plane and a second nitride semiconductor crystal portion formed as a result of growth of {11−2x} (x=0, 1, 2) facets;
- and
- making Mg concentration of said second nitride semiconductor crystal portion lower than that of said first nitride semiconductor crystal portion.
A thin film deposition method of forming thin films on a substrate by selective-area growth of a nitride semiconductor whose principal orientation plane is a (0001) plane, said thin film deposition method comprising the steps of:
- forming on a principal orientation plane of said substrate a stripe-like nitride semiconductor base layer that is parallel to a [11-20] direction of a nitride semiconductor to be grown by selective-area growth and has a (0001) plane as a principal orientation plane, or a polygon-like nitride semiconductor base layer whose side is parallel to a [11-20] direction of a nitride semiconductor to be grown by selective-area growth and which has a (0001) plane as a principal orientation plane;
- growing nitride semiconductor thin films on the principal orientation plane and side facets of said nitride semiconductor base layer by selective-area growth by vapor phase growth using a gas containing a metallic magnesium or a magnesium compound, said nitride semiconductor thin films including a first nitride semiconductor crystal portion formed as a result of growth in the direction perpendicular to the (0001) principal plane and a second nitride semiconductor crystal portion formed as a result of growth of {1−10x} (x=0, 1) facets;
- and
- making Mg concentration of said second nitride semiconductor crystal portion lower than that of said first nitride semiconductor crystal portion.
Dependencies are inferred from the claim text.