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US 12,721,056 B2Granted
Group-III element nitride semiconductor substrate
AssigneeNGK Insulators, Ltd.
InventorsKatsuhiro Imai, Tomohiko Sugiyama
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Abstract
A Group-III element nitride semiconductor substrate includes: a first surface; and a second surface. The Group-III element nitride semiconductor substrate has a c-plane tilted with respect to a direction of the first surface, and a direction of the tilt falls between a <1-100> direction and a <11-20> direction.
Claims2
A Group-III element nitride semiconductor substrate, comprising:
- a first surface;
- and
- a second surface,
- wherein the Group-III element nitride semiconductor substrate has a c-plane tilted with respect to a direction of the first surface,
- wherein the Group-III element nitride semiconductor substrate has an orientation flat parallel to a <11-20> direction,
- wherein the direction of the tilt falls within a range of +45°±12.5° or within a range of −45°±12.5° or within a range of +135°±12.5° or within a range of −135°±12.5° with respect to the <1-100> direction,
- wherein the tilt has an angle of from 0.2° to 0.8°,
- wherein the Group-III element nitride semiconductor substrate has a diameter of 75 mm or more, and has a thickness of 300 μm to 1,000 μm, and
- wherein the surface roughness (Ra) of at least one of the first surface and the second surface measured in a 90 μm square with an AFM is 1.0 nm or less.
6 more elements
Dependencies are inferred from the claim text.