Devices having and methods of forming thermally conductive substrates

Abstract

Aspects of diamond growth on semiconductors are described. Some aspects include deposition of a layer of diamond seeds on a semiconductor-containing layered structure. Some aspects include the deposition of an intermediate layer over the layer of diamond seeds. In some aspects, the intermediate layer is an immobilizing layer to immobilize the diamond seeds. Some aspects include generating synthetic diamond over a surface of a semiconductor-containing layered structure. In some aspects, synthetic diamond is generated over a surface comprising diamond seeds and an intermediate layer. In some aspects, semiconductor-containing layered structure is etched with diamond seeds in place over a surface of the semiconductor-containing layered structure. In some aspects, an interface of a substrate comprises an interface between a layer of diamond seeds and a semiconductor-containing layered structure, an interface between an intermediate layer and the layer of diamond seeds, and an interface between synthetic diamond and the intermediate layer.

Dependencies are inferred from the claim text.