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US 12,685,040 B2Granted
Group-III element nitride semiconductor substrate
AssigneeNGK Insulators, Ltd.
InventorsMasahiro Sakai, Katsuhiro Imai, Hiroki Kobayashi
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Abstract
A Group-III element nitride semiconductor substrate includes: a first surface; and a second surface, wherein warping of a crystal plane of the first surface has a plurality of extremes.
Claims7
A Group-III element nitride semiconductor substrate, comprising:
- a first surface;
- and
- a second surface,
- wherein warping of a crystal plane of the first surface has a plurality of extremes.
1 more element
A Group-III element nitride semiconductor substrate, comprising:
- a first surface;
- and
- a second surface,
- wherein warping of a crystal plane in a <11-20> direction passing through a center of the substrate in the crystal plane of the first surface, and warping of a crystal plane in a <1-100> direction perpendicular to the <11-20> direction and passing through the center of the substrate each have 3 or more of extremes,
- wherein the extremes have an interval of 3 mm or more between adjacent extremes,
- wherein an off-angle variation of the Group-III element nitride semiconductor substrate as a whole is 0.40° or less, and
- wherein the Group-III element nitride semiconductor substrate has a diameter of 75 mm or more.
4 more elements
Dependencies are inferred from the claim text.