H10P 14/2918
Being semiconductor metal oxides
Official title: {being semiconductor metal oxides (Group IIB-VIA materials H10P14/2913)}
H10P14/2918 (Being semiconductor metal oxides) appears on 157 US grants and 232 published applications in this corpus.
Search patents in H10P- Granted patents
- 157
- Published applications
- 232
- Assignees
- 105
- Inventors
- 343
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 1 |
| 2005 | 0 | 1 |
| 2006 | 0 | 4 |
| 2007 | 2 | 1 |
| 2008 | 1 | 3 |
| 2009 | 1 | 6 |
| 2010 | 2 | 9 |
| 2011 | 2 | 8 |
| 2012 | 2 | 3 |
| 2013 | 2 | 3 |
| 2014 | 8 | 12 |
| 2015 | 9 | 9 |
| 2016 | 10 | 10 |
| 2017 | 7 | 17 |
| 2018 | 13 | 15 |
| 2019 | 11 | 11 |
| 2020 | 16 | 27 |
| 2021 | 9 | 14 |
| 2022 | 18 | 23 |
| 2023 | 11 | 14 |
| 2024 | 10 | 29 |
| 2025 | 10 | 7 |
| 2026 | 9 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor element and production method for same29 Sep 2026US 12,751,048 B2National Institute of Information and Communications Technology
- Gallium oxide planar MOS-Schottky rectifier28 Jul 2026US 12,696,466 B2The Government of the United States of America, as represented by the Secretary of the Navy
- Diamond-capped gallium oxide transistor26 May 2026US 12,642,016 B2The Government of the United States of America, as represented by the Secretary of the Navy
- Metal oxide semiconductor-based light emitting device19 May 2026US 12,635,296 B2Silanna UV Technologies Pte Ltd
- Metal oxide semiconductor-based light emitting device19 May 2026US 12,635,297 B2Silanna UV Technologies Pte Ltd
- Devices comprising a thick (alzga1-z)2o3 layer on a (001) ga2o3 substrate using a (alxga1-x)2o3 buffer layer, and methods of making and use thereof1 Oct 2026US 2026/0304878 A1Ohio State Innovation Foundation
- Epitaxial wafer, and method for producing same7 May 2026US 2026/0125819 A1Novel Crystal Technology, Inc.
- Epitaxial oxide transistor9 Apr 2026US 2026/0101611 A1Silanna UV Technologies Pte Ltd
- Compositions, methods, and devices26 Feb 2026US 2026/0055503 A1Ohio State Innovation Foundation
- Metal oxide semiconductor-based light emitting device1 Jan 2026US 2026/0006950 A1Silanna UV Technologies Pte Ltd
Most cited
By later US patents
- β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method36US 7,393,411 B2Waseda University · 2008
- Epitaxial oxide materials, structures, and devices20US 11,522,103 B1Silanna UV Technologies Pte Ltd · 2022
- Sapphire single crystal substrate for semiconductor devices18US 4,126,731 ASemiconductor Research Foundation · 1978
- Epitaxial oxide field effect transistor14US 11,489,090 B1Silanna UV Technologies Pte Ltd · 2022
- Metal oxide semiconductor-based light emitting device12US 11,342,484 B2Silanna UV Technologies Pte Ltd · 2022