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US 2026/0055503 A1Published application
Compositions, methods, and devices
AssigneeOhio State Innovation Foundation
InventorsHongping ZHAO, A F M Anhar Uddin BHUYAN, Lingyu MENG
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Abstract
Disclosed herein are compositions, methods, and devices. Disclosed herein is a composition comprising a β-(AlxGa1-x)2O3, having an x value of less than about 5% and comprising at least one n-carrier dopant. Also disclosed are methods of making the same. Also disclosed are devices comprising the disclosed compositions.
Claims32
A composition comprising a β-(AlxGa1-x)2O3, having an x value of less than about 5% and comprising at least one n-carrier dopant.
A method of forming an Al-Ga-containing film comprising:
- a) exposing a β-Ga2O3-based substrate to an aluminum precursor, a gallium precursor, and/or oxygen precursor at a first temperature and a first pressure;
- and
- b) growing a β-(AlxGa1-x)2O3 thin film, wherein an x value is less than about 5%, at a growth rate greater than about 3 μm/h.
Dependencies are inferred from the claim text.