DEVICES COMPRISING A THICK (AlzGa1-z)2O3 LAYER ON A (001) Ga2O3 SUBSTRATE USING A (AlxGa1-x)2O3 BUFFER LAYER, AND METHODS OF MAKING AND USE THEREOF

Abstract

Disclosed herein are devices comprising a thick (AlzGa1-z)2O3 (e.g., Ga2O3) layer on a (001) Ga2O3 substrate using a (AlxGa1-x)2O3 buffer layer, and methods of making and use thereof. For example, disclosed herein are devices comprising a (001) Ga2O3 substrate, a first layer comprising (AlxGa1-x)2O3 where x is from 0 to 0.5, and a second layer comprising (AlzGa1-z)2O3 where is from 0 to 0.2 (e.g., Ga2O3), wherein the first layer is disposed on the substrate and the second layer is disposed on the first layer, such that the first layer is sandwiched between the substrate and the second layer, wherein the second layer has an average thickness of from 5 μm to 1000 μm (e.g., from 5 μm to 15 μm). Also disclosed herein are methods of making any of the devices disclosed herein, for example using metal organic chemical vapor deposition (MOCVD).

Dependencies are inferred from the claim text.