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US 2026/0125819 A1Published application
Epitaxial wafer, and method for producing same
AssigneeNovel Crystal Technology, Inc.
InventorsChia-Hung LIN, Kohei SASAKI
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Abstract
A method for producing an epitaxial wafer includes using a HVPE method and forming an epitaxial wafer by exposing a substrate including a β-Ga2O3-based single crystal and including a donor impurity to a GaCl gas and an O2 gas and thereby growing an epitaxial film including a β-Ga2O3-based single crystal on a main surface of the substrate, and annealing the epitaxial wafer at a temperature of not less than 1200° C. in a nitrogen atmosphere.
Claims4
A method for producing an epitaxial wafer, comprising:
- using a HVPE method and forming an epitaxial wafer by exposing a substrate comprising a β-Ga2O3-based single crystal and including a donor impurity to a GaCl gas and an O2 gas and thereby growing an epitaxial film comprising a β-Ga203-based single crystal on a main surface of the substrate;
- and
- annealing the epitaxial wafer at a temperature of not less than 1200° C. in a nitrogen atmosphere.
An epitaxial wafer, comprising:
- a substrate comprising a β-Ga2O3-based single crystal and including a donor impurity;
- and
- an epitaxial film comprising a β-Ga2O3-based single crystal on the substrate,
- wherein a donor concentration of the substrate is not less than 80% of a concentration of the donor impurity,
- wherein a Cl concentration of the epitaxial film is not less than 1×1014 cm−3, and
- wherein a H concentration of the substrate and the epitaxial film is not more than 3×1017 cm−3.
3 more elements
Dependencies are inferred from the claim text.