Metal oxide semiconductor-based light emitting device
AssigneeSilanna UV Technologies Pte Ltd
InventorPetar Atanackovic
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Abstract
An optoelectronic semiconductor light emitting device configured to emit light having a wavelength in the range from about 150 nm to about 425 nm is disclosed. In embodiments, the device comprises a substrate having at least one epitaxial semiconductor layer disposed thereon, wherein each of the one or more epitaxial semiconductor layers comprises a metal oxide. Also disclosed is an optoelectronic semiconductor device for generating light of a predetermined wavelength comprising a substrate and an optical emission region. The optical emission region has an optical emission region band structure configured for generating light of the predetermined wavelength and comprises one or more epitaxial metal oxide layers supported by the substrate.
Claims32
An optoelectronic semiconductor light emitting device comprising:
- a substrate;
- and
- a plurality of epitaxial semiconductor layers disposed on the substrate, wherein each of the epitaxial semiconductor layers comprises an epitaxial oxide, wherein at least one of the epitaxial semiconductor layers comprises an optically emissive material of direct bandgap type, wherein at least one of the epitaxial semiconductor layers comprises (Alx1Ga1−x1)2O3 wherein 0≤x1≤1, wherein the plurality of epitaxial semiconductor layers comprises:
- first region comprising a first conductivity type;
- a second region comprising a not-intentionally doped (NID) intrinsic region;
- and
- a third region comprising a second conductivity type,
- wherein the second region is between the first region and the third region,
- wherein the substrate and the plurality of epitaxial semiconductor layers are a substantially single crystal epitaxially formed device,
- wherein the optoelectronic semiconductor light emitting device is configured to emit light having a wavelength in a range from 150 nm to 425 nm,
- wherein the first, second, or third region comprises a superlattice, and
- wherein the superlattice comprises the (Alx1Ga1−x1)2O3 and comprises (Alx2Ga1−x2)2O3 wherein 0≤x2≤1, wherein x1 is not equal to x2.
An optoelectronic semiconductor device for generating light of a predetermined wavelength comprising:
- a substrate;
- a first, a second and a third epitaxial oxide layer supported by the substrate, wherein at least one of the first, second and third epitaxial oxide layers comprises (Alx1Ga1−x1)2O3, wherein 0≤x1≤1;
- an optical emission region having an optical emission region band structure configured for generating the light of the predetermined wavelength, the optical emission region comprising the first epitaxial oxide layer supported by the substrate, wherein the first epitaxial oxide layer has an optical emission region band gap energy capable of generating the light of the predetermined wavelength, wherein the first epitaxial oxide layer is of direct bandgap type;
- a first conductivity type region having the second epitaxial oxide layer, the first conductivity type region having a first conductivity type region band structure configured to operate in combination with the optical emission region to generate the light of the predetermined wavelength;
- and
- a second conductivity type region having the third epitaxial oxide layer, the second conductivity type region having a second conductivity type region band structure configured to operate in combination with the optical emission region and the first conductivity type region to generate the light of the predetermined wavelength,
- wherein the optical emission region is between the first conductivity type region and the second conductivity type region,
- wherein the substrate, the first conductivity type region, the second conductivity type region, and the optical emission region are a substantially single crystal epitaxially formed device,
- wherein the first, second or third epitaxial oxide layer comprises a superlattice comprising two or more layers of epitaxial oxides forming a unit cell and repeating with a fixed unit cell period along a growth direction, and
- wherein one of the two or more layers of epitaxial oxides forming the unit cell of the superlattice comprises the (Alx1Ga1−x1)2O3 and wherein another of the two or more layers of epitaxial oxides forming the unit cell of the superlattice comprises (Alx2Ga1−x2)2O3 wherein 0≤x2≤1, wherein x1 is not equal to x2.
Dependencies are inferred from the claim text.