Metal oxide semiconductor-based light emitting device
AssigneeSilanna UV Technologies Pte Ltd
InventorPetar Atanackovic
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Abstract
An optoelectronic semiconductor light emitting device configured to emit light having a wavelength in the range from about 150 nm to about 425 nm is disclosed. In embodiments, the device comprises a substrate having at least one epitaxial semiconductor layer disposed thereon, wherein each of the one or more epitaxial semiconductor layers comprises a metal oxide. An epitaxial semiconductor layer of the device can include a first single crystal oxide material. The first single crystal oxide material can include: at least one of magnesium, nickel, and zinc; at least one of aluminum and gallium; and oxygen. The first single crystal oxide material can also include a cubic crystal symmetry.
Claims23
An optoelectronic semiconductor light emitting device comprising:
- a substrate comprising a single crystal material;
- and
- a plurality of epitaxial semiconductor layers disposed on the substrate,
- wherein a first epitaxial semiconductor layer of the plurality of epitaxial semiconductor layers is elastically strained with respect to the substrate,
- wherein the first epitaxial semiconductor layer of the plurality of epitaxial semiconductor layers comprises a first single crystal oxide material comprising:
- at least one of magnesium, nickel, and zinc;
- at least one of aluminum and gallium;
- and
- oxygen,
- wherein the first single crystal oxide material comprises a cubic crystal symmetry,
- wherein the optoelectronic semiconductor light emitting device is configured to emit light having a wavelength in a range from 150 nm to 425 nm, and
- wherein the first epitaxial semiconductor layer is in an active region of the optoelectronic semiconductor light emitting device.
Dependencies are inferred from the claim text.