Gallium oxide planar MOS-Schottky rectifier

A rectifier having high forward bias current with low specific on-resistance, comprising:

• a β-Ga2O3 n-type drift layer on a β-Ga2O3 substrate;
• a semi-insulating β-Ga2O3 layer formed on the drift layer;
• a plurality of predetermined spatially defined N-type regions comprising donor ion-implanted species formed in the semi-insulating β-Ga2O3 layer;
• wherein unimplanted regions of the semi-insulating β-Ga2O3 layer and the donor ion-implanted regions form alternating semi-insulating and N-type β-Ga2O3 regions;
• wherein the species and a depth of the trenches of implanted donor species are configured to produce a predetermined electronic response in the rectifier.

A method for forming a rectifier having high forward bias current with low specific on-resistance, comprising:

• forming a β-Ga2O3 n-type drift layer on a β-Ga2O3 substrate;
• and
• forming a plurality of spatially defined semi-insulating regions of ion-implanted acceptor species formed in the β-Ga2O3 n-type drift layer;
• wherein unimplanted regions of the β-Ga2O3 n-type drift layer and the ion-implanted regions form alternating n-type and semi-insulating regions in the β-Ga2O3 drift layer;
• and
• wherein the ion-implanted acceptor species and a depth of the regions of ion-implanted acceptor species are configured to produce a predetermined electronic response in the rectifier.

A method for forming a rectifier having high forward bias current with low specific on-resistance, comprising:

• forming a β-Ga2O3 n-type drift layer on a β-Ga2O3 substrate;
• forming a semi-insulating β-Ga2O3 layer formed on the drift layer;
• and
• forming a plurality of predetermined spatially defined N-type regions comprising donor ion-implanted species formed in the semi-insulating β-Ga2O3 layer;
• wherein unimplanted regions of the β-Ga2O3 n-type drift layer and the ion-implanted regions form alternating semi-insulating and N-type regions in the β-Ga2O3;
• and
• wherein the acceptor species and a depth of the trenches of implanted acceptor species are configured to produce a predetermined electronic response in the rectifier.