Epitaxial oxide materials, structures, and devices
AssigneeSilanna UV Technologies Pte Ltd
InventorPetar Atanackovic
Life of this patent
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Abstract
The present disclosure provides techniques for epitaxial oxide materials, structures and devices. In some embodiments, a semiconductor structure includes an epitaxial oxide heterostructure, comprising: a substrate; a first epitaxial oxide layer comprising (Nix1Mgy1Zn1−x1−yl)2GeO4 wherein 0≤x1≤1 and 0≤y1≤1; and a second epitaxial oxide layer comprising (Nix2Mgy2Zn1−x2−y2)2GeO4 wherein 0≤x2≤1 and 0≤y2≤1. In some cases, either: x1≠x2 and y1=y2; x1=x2 and y1≠y2; or x1≠x2 and y1≠y2. In some embodiments, a semiconductor structure includes an epitaxial oxide heterostructure, comprising: a substrate; a first epitaxial oxide layer comprising (Mgx1Zn1−x1)(Aly1Ga1−y1)2O4 wherein 0≤x1≤1 and 0≤y1≤1; and a second epitaxial oxide layer comprising (Nix2Mgy2Zn1−x2−y2)2GeO4 wherein 0≤x2≤1 and 0≤y2≤1.
Claims40
A semiconductor device comprising:
- a semiconductor structure, the semiconductor structure comprising an epitaxial oxide heterostructure, the epitaxial oxide heterostructure comprising:
- a substrate;
- a first epitaxial oxide layer comprising (Nix1Mgy1Zn1−x1−y1)2GeO4 wherein 0≤x1≤1 and 0≤y1≤1;
- and
- a second epitaxial oxide layer comprising (Nix2Mgy2Zn1−x2−y2)2GeO4 wherein 0≤x2≤1 and 0≤y2≤1,
- wherein either:
- x1≠x2 and y1=y2;
- x1=x2 and y1≠y2;
- or x1≠x2 and y1≠y2, and
- wherein the semiconductor device is:
- a light emitting diode (LED) that emits light with a wavelength from 150 nm to 280 nm;
- or
- a laser that emits light with a wavelength from 150 nm to 280 nm;
- or
- a radiofrequency (RF) switch;
- or
- a high electron mobility transistor (HEMT).
A semiconductor structure, comprising an epitaxial oxide heterostructure, comprising:
- a substrate;
- a first epitaxial oxide layer comprising (Nix1Mgy1Zn1−x1−y1)2GeO4 wherein 0≤x1≤1 and 0≤y1≤1;
- and
- a second epitaxial oxide layer comprising (Nix2Mgy2Zn1−x2−y2)2GeO4 wherein 0≤x2≤1 and 0≤y2≤1,
- wherein either:
- x1≠x2 and y1=y2;
- x1=x2 and y1≠y2;
- or x1≠x2 and y1≠y2,
- wherein either:
- x1≠x2 and y1=y2;
- x1=x2 and y1≠y2;
- or x1≠x2 and y1≠y2, and
- wherein the first and the second epitaxial oxide layers are layers of a chirp layer comprising alternating layers with layer thicknesses that change throughout the chirp layer.
A semiconductor device comprising:
- a semiconductor structure, the semiconductor structure comprising an epitaxial oxide heterostructure, the epitaxial oxide heterostructure comprising:
- a substrate;
- a first epitaxial oxide layer comprising (Mgx1Zn1−x1)(Aly1Ga1−y1)2O4 wherein 0≤x1≤1 and 0≤y1≤1;
- and
- a second epitaxial oxide layer comprising (Nix2Mgy2Zn1−x2−y2)2GeO4 wherein 0≤x2≤1 and 0≤y2≤1, and
- wherein the semiconductor device is:
- a light emitting diode (LED) that emits light with a wavelength from 150 nm to 280 nm;
- or
- a laser that emits light with a wavelength from 150 nm to 280 nm;
- or
- a radiofrequency (RF) switch;
- or
- a high electron mobility transistor (HEMT).
A semiconductor structure, comprising an epitaxial oxide heterostructure, comprising:
- a substrate;
- a first epitaxial oxide layer comprising (Mgx1Zn1−x1)(Aly1Ga1−y1)2O4 wherein 0≤x1≤1 and 0≤y1≤1;
- and
- a second epitaxial oxide layer comprising (Nix2Mgy2Zn1−x2−y2)2GeO4 wherein 0≤x2≤1 and 0≤y2≤1,
- wherein the first epitaxial oxide layer comprises (Mgx1)(Aly1Ga1−y1)2O4 and the second epitaxial oxide layer comprises (Nix2Mgy2)2GeO4.
A semiconductor structure, comprising an epitaxial oxide heterostructure, comprising:
- a substrate;
- a first epitaxial oxide layer comprising (Mgx1Zn1−x1)(Aly1Ga1−y1)2O4 wherein 0≤x1≤1 and 0≤y1≤1;
- and
- a second epitaxial oxide layer comprising (Nix2Mgy2Zn1−x2−y2)2GeO4 wherein 0≤x2≤1 and 0≤y2≤1,
- wherein the first and the second epitaxial oxide layers are layers of a unit cell of a superlattice.
A semiconductor structure, comprising an epitaxial oxide heterostructure, comprising:
- a substrate;
- a first epitaxial oxide layer comprising (Mgx1Zn1−x1)(Aly1Ga1−y1)2O4 wherein 0≤x1≤1 and 0≤y1≤1;
- and
- a second epitaxial oxide layer comprising (Nix2Mgy2Zn1−x2−y2)2GeO4 wherein 0≤x2≤1 and 0≤y2≤1,
- wherein the first and the second epitaxial oxide layers are layers of a chirp layer comprising alternating layers with layer thicknesses that change throughout the chirp layer.
Dependencies are inferred from the claim text.