Epitaxial oxide transistor

Abstract

The techniques described herein relate to a transistor, including a substrate including SiC-4H, MgO, or AlGaO3; an epitaxial channel layer on the substrate, and a gate layer on the epitaxial channel layer. The epitaxial channel layer can include Ga2O3 with a first bandgap, wherein the Ga2O3 is: α-Ga2O3 with a hexagonal or trigonal crystal symmetry; κ-Ga2O3 with an orthorhombic crystal symmetry; or γ-Ga2O3 with a cubic crystal symmetry. The gate layer can include an oxide material with a second bandgap, where the second bandgap is wider than the first bandgap. The transistor can also include electrical contacts including: a source electrical contact coupled to the epitaxial channel layer; a drain electrical contact coupled to the epitaxial channel layer; and a gate electrical contact coupled to the gate layer.

Dependencies are inferred from the claim text.