H10P 14/2902
Being group iva materials
Official title: {being Group IVA materials}
H10P14/2902 (Being group iva materials) appears on 5,972 US grants and 6,510 published applications in this corpus.
Search patents in H10P- Granted patents
- 5,972
- Published applications
- 6,510
- Assignees
- 1,367
- Inventors
- 9,565
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 16 | 0 |
| 1977 | 10 | 0 |
| 1978 | 14 | 0 |
| 1979 | 18 | 0 |
| 1980 | 12 | 0 |
| 1981 | 6 | 0 |
| 1982 | 10 | 0 |
| 1983 | 13 | 0 |
| 1984 | 21 | 0 |
| 1985 | 35 | 0 |
| 1986 | 31 | 0 |
| 1987 | 36 | 0 |
| 1988 | 29 | 0 |
| 1989 | 49 | 0 |
| 1990 | 38 | 0 |
| 1991 | 52 | 0 |
| 1992 | 53 | 0 |
| 1993 | 68 | 0 |
| 1994 | 65 | 0 |
| 1995 | 58 | 0 |
| 1996 | 44 | 0 |
| 1997 | 33 | 0 |
| 1998 | 52 | 0 |
| 1999 | 60 | 0 |
| 2000 | 71 | 0 |
| 2001 | 90 | 41 |
| 2002 | 109 | 174 |
| 2003 | 115 | 245 |
| 2004 | 129 | 195 |
| 2005 | 120 | 224 |
| 2006 | 147 | 240 |
| 2007 | 133 | 228 |
| 2008 | 136 | 201 |
| 2009 | 151 | 188 |
| 2010 | 156 | 239 |
| 2011 | 194 | 240 |
| 2012 | 167 | 272 |
| 2013 | 208 | 253 |
| 2014 | 261 | 322 |
| 2015 | 292 | 320 |
| 2016 | 360 | 386 |
| 2017 | 333 | 394 |
| 2018 | 309 | 346 |
| 2019 | 334 | 359 |
| 2020 | 313 | 303 |
| 2021 | 225 | 249 |
| 2022 | 189 | 249 |
| 2023 | 175 | 271 |
| 2024 | 162 | 228 |
| 2025 | 169 | 219 |
| 2026 | 101 | 124 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method for manufacturing a silicon carbide semiconductor component including a monocrystalline silicon carbide substrate and a polycrystalline silicon carbide substrate6 Oct 2026US 12,757,645 B2Robert Bosch GmbH
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Composite substrate, manufacturing method thereof, and semiconductor device6 Oct 2026US 12,757,772 B2Enkris Semiconductor, Inc.
- Semiconductor substrate, method for producing semiconductor substrate, semiconductor substrate production device, electronic component, and electronic device29 Sep 2026US 12,751,219 B2KYOCERA Corporation
- Implant hard mask for substrates22 Sep 2026US 12,745,610 B2Applied Materals, Inc.
- Semiconductor structure and method of manufacture8 Oct 2026US 2026/0313943 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Silicon carbide substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device8 Oct 2026US 2026/0313998 A1Sumitomo Electric Industries, Ltd.
- Semiconductor device structure and manufacturing method thereof8 Oct 2026US 2026/0314277 A1Taiwan Semiconductor Manufacturing Company.Ltd
- High Purity SiOC and SiC, Methods Compositions and Applications1 Oct 2026US 2026/0296898 A1Pallidus, Inc.
- Reduction of interface resistance between silicon nanosheets and highly doped source/drain regions in nanosheet devices1 Oct 2026US 2026/0304810 A1ASM IP Holding B. V.
Most cited
By later US patents
- Apparatus and method for forming semiconductor contacts1,331US 8,772,109 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Method for manufacturing thin film using atomic layer deposition885US 6,270,572 B1Samsung Electronics Co., Ltd. · 2001
- Method for forming a thin layer on a semiconductor substrate and apparatus therefor628US 5,178,682 AMitsubishi Denki Kabushiki Kaisha · 1993
- Method of manufacturing a substrate using an SiGe layer600US 6,607,948 B1Kabushiki Kaisha Toshiba · 2003
- Cyclical epitaxial deposition and etch580US 8,367,528 B2ASM America, Inc. · 2013