H10P 14/2905
Silicon, silicon germanium or germanium
Official title: {Silicon, silicon germanium or germanium}
H10P14/2905 (Silicon, silicon germanium or germanium) appears on 4,878 US grants and 5,079 published applications in this corpus.
Search patents in H10P- Granted patents
- 4,878
- Published applications
- 5,079
- Assignees
- 1,167
- Inventors
- 7,875
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 15 | 0 |
| 1977 | 10 | 0 |
| 1978 | 14 | 0 |
| 1979 | 17 | 0 |
| 1980 | 11 | 0 |
| 1981 | 6 | 0 |
| 1982 | 10 | 0 |
| 1983 | 13 | 0 |
| 1984 | 20 | 0 |
| 1985 | 35 | 0 |
| 1986 | 30 | 0 |
| 1987 | 35 | 0 |
| 1988 | 29 | 0 |
| 1989 | 49 | 0 |
| 1990 | 35 | 0 |
| 1991 | 47 | 0 |
| 1992 | 53 | 0 |
| 1993 | 63 | 0 |
| 1994 | 63 | 0 |
| 1995 | 56 | 0 |
| 1996 | 41 | 0 |
| 1997 | 30 | 0 |
| 1998 | 49 | 0 |
| 1999 | 58 | 0 |
| 2000 | 63 | 0 |
| 2001 | 79 | 33 |
| 2002 | 94 | 142 |
| 2003 | 93 | 234 |
| 2004 | 117 | 177 |
| 2005 | 102 | 191 |
| 2006 | 136 | 210 |
| 2007 | 112 | 202 |
| 2008 | 119 | 165 |
| 2009 | 135 | 151 |
| 2010 | 143 | 178 |
| 2011 | 155 | 181 |
| 2012 | 125 | 197 |
| 2013 | 158 | 205 |
| 2014 | 200 | 252 |
| 2015 | 243 | 257 |
| 2016 | 302 | 318 |
| 2017 | 279 | 326 |
| 2018 | 247 | 249 |
| 2019 | 250 | 247 |
| 2020 | 206 | 219 |
| 2021 | 167 | 190 |
| 2022 | 141 | 170 |
| 2023 | 141 | 192 |
| 2024 | 103 | 164 |
| 2025 | 111 | 140 |
| 2026 | 68 | 89 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Composite substrate, manufacturing method thereof, and semiconductor device6 Oct 2026US 12,757,772 B2Enkris Semiconductor, Inc.
- Semiconductor substrate, method for producing semiconductor substrate, semiconductor substrate production device, electronic component, and electronic device29 Sep 2026US 12,751,219 B2KYOCERA Corporation
- Systems for selective deposition using a sacrificial capping layer15 Sep 2026US 12,740,346 B2ASM IP Holding B. V.
- Semiconductor structure comprising first III-V compound layerand second III-V compound layer and method of manufacture8 Sep 2026US 12,733,193 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method of manufacture8 Oct 2026US 2026/0313943 A1Taiwan Semiconductor Manufacturing Company.Ltd
- High Purity SiOC and SiC, Methods Compositions and Applications1 Oct 2026US 2026/0296898 A1Pallidus, Inc.
- Reduction of interface resistance between silicon nanosheets and highly doped source/drain regions in nanosheet devices1 Oct 2026US 2026/0304810 A1ASM IP Holding B. V.
- Semiconductor structure24 Sep 2026US 2026/0293282 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Strain relief trenches for epitaxial growth24 Sep 2026US 2026/0293541 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Apparatus and method for forming semiconductor contacts1,331US 8,772,109 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Method for manufacturing thin film using atomic layer deposition885US 6,270,572 B1Samsung Electronics Co., Ltd. · 2001
- Method for forming a thin layer on a semiconductor substrate and apparatus therefor628US 5,178,682 AMitsubishi Denki Kabushiki Kaisha · 1993
- Method of manufacturing a substrate using an SiGe layer600US 6,607,948 B1Kabushiki Kaisha Toshiba · 2003
- Cyclical epitaxial deposition and etch580US 8,367,528 B2ASM America, Inc. · 2013