Method for forming a thin layer on a semiconductor substrate and apparatus therefor

An apparatus for forming a thin film on a surface of a semiconductor substrate, comprising:

• an oxide forming compartment including means for forming a thin oxide film on the surface of a semiconductor substrate by irradiating a surface of the semiconductor substrate with light while exposing the semiconductor substrate to an oxidizing gas atmosphere;
• a cleaning compartment connected to said oxide forming compartment, said cleaning compartment including means for removing t he thin oxide film and for providing a clean surface of the semiconductor substrate by heating the semiconductor substrate to 200.degree. to 700.degree. C. while the semiconductor substrate is exposed to an atmosphere within said cleaning chamber for removing the thin oxide film and by irradiating light to the surface of the semiconductor substrate;
• an intermediate compartment connected to said cleaning compartment for temporarily accommodating the semiconductor substrate;
• a film forming compartment connected to said intermediate compartment, said film forming compartment including means for forming a thin film on the clean surface of the semiconductor substrate;
• first transferring means for transferring said semiconductor substrate from said oxide forming compartment to said cleaning compartment without exposing said semiconductor substrate to ambient air;
• second transferring means for transferring said semiconductor substrate from said cleaning compartment to said intermediate compartment without exposing said semiconductor substrate to ambient air;
• and
• third transferring means for transferring said semiconductor substrate from said intermediate compartment to said film forming compartment without exposing said semiconductor substrate to ambient air.

An apparatus for forming a thin film on a surface of a semiconductor substrate, comprising:

• an oxide forming compartment including means for forming a thin oxide film on a surface of a semiconductor substrate by irradiating the surface of the semiconductor substrate with light while the semiconductor substrate is exposed to an oxidizing gas atmosphere within said oxide forming compartment;
• and
• a film forming compartment connected to said oxide forming compartment, wherein said film forming compartment includes:
• means for removing the oxide film and for providing a clean surface of the semiconductor substrate by heating the semiconductor substrate to 200.degree. to 700.degree. C. while the semiconductor substrate is exposed to an atmosphere within the film forming compartment for removing the oxide film and by irradiating the surface of the semiconductor substrate with light, and
• means for forming a thin film on the clean surface of said semiconductor substrate;
• said apparatus further comprising:
• transferring means for transferring said semiconductor substrate from said oxide forming compartment to said film forming compartment without exposing said semiconductor substrate to ambient air.