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US 12,751,219 B2Granted
Semiconductor substrate, method for producing semiconductor substrate, semiconductor substrate production device, electronic component, and electronic device
AssigneeKYOCERA Corporation
InventorsTakeshi Kamikawa, Katsuaki Masaki, Yuichiro Hayashi, Toshihiro Kobayashi
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Abstract
A semiconductor substrate includes a base substrate, a mask layer including an opening portion and a mask portion, and a GaN-based semiconductor layer that includes a GaN-based semiconductor. The GaN-based semiconductor layer includes: a first portion located on the mask portion; and a second portion that is located on the opening portion and has a lower dislocation density of non-threading dislocations in a cross section of the GaN-based semiconductor layer taken along a thickness direction than the first portion.
Claims20
A semiconductor substrate comprising:
- a base substrate;
- a mask layer that is located on the base substrate, and comprises a first opening portion and a mask portion;
- and
- a first semiconductor layer that comprises a GaN-based semiconductor located over the base substrate exposed through the first opening portion and over the mask portion,
- wherein the first semiconductor layer comprises:
- a first portion located on the mask portion, and
- a second portion that is located on the first opening portion and has a lower dislocation density of non-threading dislocations in a cross section of the first semiconductor layer taken along a thickness direction than the first portion,
- wherein the first portion comprises:
- a third portion located on the mask portion, and
- a fourth portion located closer to an upper surface of the first semiconductor layer than the third portion, and the fourth portion comprising a different impurity concentration from the third portion, and
- wherein an upper surface of the third portion comprises an incline with respect to the upper surface of the first semiconductor layer.
8 more elements
A semiconductor substrate comprising:
- a base substrate;
- a mask layer that is located on the base substrate, and comprises a first opening portion and a mask portion;
- and
- a first semiconductor layer that comprises a GaN-based semiconductor located over the base substrate exposed through the first opening portion and over the mask portion, wherein
- the first semiconductor layer comprises a first portion located on the mask portion,
- wherein the first portion comprises non-threading dislocations,
- wherein a threading dislocation density in the first portion is 5×106/cm2 or lower,
- wherein the first portion comprises:
- a third portion located on the mask portion, and
- a fourth portion located closer to an upper surface of the first semiconductor layer than the third portion, the fourth portion has a non-threading dislocation density lower than the third portion, and the fourth portion has a different impurity concentration from the third portion, and
- wherein an upper surface of the third portion is inclined with the upper surface of the first semiconductor layer.
8 more elements
A method for producing a semiconductor substrate comprising:
- preparing a template substrate comprising a base substrate and a mask layer that is located above the base substrate and comprises an opening portion and a mask portion;
- and
- forming a first portion that is located on the mask portion and comprises a GaN-based semiconductor, and a second portion that is located on the opening portion and comprises a GaN-based semiconductor, with a dislocation density of non-threading dislocations being lower in a cross section of the second portion taken along a thickness direction than in a cross section of the first portion taken along the thickness direction,
- wherein the first portion comprises:
- a third portion located on the mask portion, and
- a fourth portion located closer to an upper surface of the first semiconductor layer than the third portion, and the fourth portion comprising a different impurity concentration from the third portion, and
- wherein an upper surface of the third portion comprises an incline with respect to the upper surface of the first semiconductor layer after the forming.
4 more elements
Dependencies are inferred from the claim text.