H10P 14/2904
Silicon carbide
Official title: {Silicon carbide}
H10P14/2904 (Silicon carbide) appears on 1,181 US grants and 1,568 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,181
- Published applications
- 1,568
- Assignees
- 411
- Inventors
- 2,241
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 4 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 2 | 0 |
| 1997 | 1 | 0 |
| 1998 | 3 | 0 |
| 1999 | 2 | 0 |
| 2000 | 9 | 0 |
| 2001 | 12 | 10 |
| 2002 | 17 | 44 |
| 2003 | 27 | 21 |
| 2004 | 25 | 30 |
| 2005 | 24 | 41 |
| 2006 | 17 | 38 |
| 2007 | 26 | 35 |
| 2008 | 23 | 40 |
| 2009 | 21 | 43 |
| 2010 | 20 | 51 |
| 2011 | 35 | 59 |
| 2012 | 39 | 82 |
| 2013 | 48 | 46 |
| 2014 | 59 | 80 |
| 2015 | 61 | 60 |
| 2016 | 63 | 81 |
| 2017 | 63 | 73 |
| 2018 | 59 | 111 |
| 2019 | 92 | 115 |
| 2020 | 108 | 88 |
| 2021 | 59 | 65 |
| 2022 | 57 | 89 |
| 2023 | 41 | 82 |
| 2024 | 60 | 76 |
| 2025 | 62 | 78 |
| 2026 | 34 | 30 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method for manufacturing a silicon carbide semiconductor component including a monocrystalline silicon carbide substrate and a polycrystalline silicon carbide substrate6 Oct 2026US 12,757,645 B2Robert Bosch GmbH
- Semiconductor substrate, method for producing semiconductor substrate, semiconductor substrate production device, electronic component, and electronic device29 Sep 2026US 12,751,219 B2KYOCERA Corporation
- Implant hard mask for substrates22 Sep 2026US 12,745,610 B2Applied Materals, Inc.
- Method for sic step flow growth by regulating growth monmoers using chemical potential under non-equilibrium condition15 Sep 2026US 12,735,806 B2Xiamen University
- Polycrystalline silicon carbide substrate with density gradient and method of manufacturing the same15 Sep 2026US 12,740,118 B2STMicroelectronics International N. V.
- Silicon carbide substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device8 Oct 2026US 2026/0313998 A1Sumitomo Electric Industries, Ltd.
- High Purity SiOC and SiC, Methods Compositions and Applications1 Oct 2026US 2026/0296898 A1Pallidus, Inc.
- Substrate for sic semiconductor devices, sic bonded substrate, sic polycrystalline substrate, and method for producing sic polycrystalline substrate1 Oct 2026US 2026/0305193 A1Sumitomo Metal Mining Co., Ltd.
- Semiconductor substrate, semiconductor epitaxial wafer, and method of manufacturing semiconductor substrate24 Sep 2026US 2026/0293560 A1Mitsubishi Electric Corporation
- Method and assembly for the removal of silicon carbide from reactor parts27 Aug 2026US 2026/0250840 A1Lpe S.P.A.
Most cited
By later US patents
- High efficiency light emitting diodes from bipolar gallium nitride558US 5,210,051 ACree Research, Inc. · 1993
- Method for forming silicon-containing materials during a photoexcitation deposition process535US 7,651,955 B2APPLIED Materials.Inc. · 2010
- Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates497US 6,177,688 B1North Carolina State University · 2001
- Compound semi-conductors and controlled doping thereof493US 5,709,745 AOhio Aerospace Institute · 1998
- Method of preparing silicon carbide surfaces for crystal growth490US 4,946,547 ACree Research, Inc. · 1990