Semiconductor substrate, semiconductor epitaxial wafer, and method of manufacturing semiconductor substrate
AssigneeMitsubishi Electric Corporation
InventorsTakuyo NAKAMURA, Kenichi HAMANO, Takanori TANAKA
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AssigneeMitsubishi Electric Corporation
InventorsTakuyo NAKAMURA, Kenichi HAMANO, Takanori TANAKA
Estimating the term…
An object of the present disclosure is to provide the semiconductor substrate and a semiconductor epitaxial wafer capable of achieving both measures against an epitaxial crown and prevention of breakage or cracking occurring from a terminal end portion as a start point and a method of manufacturing the semiconductor substrate. A semiconductor substrate according to the present disclosure includes: an effective region as a region in which a semiconductor chip is formed and including a first main surface; an ineffective region located on an outer surrounding of the first main surface and including a second main surface having a surface shape different from the first main surface; and an end surface processing portion located on an outer surrounding of the second main surface and included in the ineffective region, wherein a surface height of the second main surface is lower than a surface height of the first main surface.
A semiconductor substrate, comprising:
Dependencies are inferred from the claim text.