Substrate for sic semiconductor devices, sic bonded substrate, sic polycrystalline substrate, and method for producing sic polycrystalline substrate

Abstract

Provided is a substrate for a SiC semiconductor device, a SiC bonded substrate, a SiC polycrystalline substrate, and a SiC polycrystalline substrate manufacturing method, which can sufficiently suppress an amount of warping of the substrate after back grinding in the substrate for a SiC semiconductor device having a structure in which the SiC polycrystalline substrate and a SiC single crystal substrate are bonded. A substrate for a SiC semiconductor device, wherein the device is formed by stacking a support substrate made of SiC polycrystalline, a SiC single crystal substrate bonded to a surface of the support substrate, a SiC single crystal epitaxial layer formed on the surface of the SiC single crystal substrate, and a component of a semiconductor element formed on the SiC single crystal epitaxial layer, in this sequence, wherein the surface of the support substrate that is not bonded to the SiC single crystal substrate is a ground surface, and wherein an amount of warping of the ground surface relative to a diameter of the ground surface is 0.17 mm/inch or less.

Dependencies are inferred from the claim text.