Method for sic step flow growth by regulating growth monmoers using chemical potential under non-equilibrium condition

A method for SiC step flow growth by regulating growth monomers using chemical potential under a non-equilibrium condition, comprising:

• 1) preparing a silicon carbide (SiC) substrate, wherein the SiC substrate is a 4H—SiC substrate with a step;
• 2) heating a reaction chamber to a first temperature, and then maintaining the reaction chamber at the first temperature;
• 3) placing the 4H—SiC substrate with the step into a susceptor, and then loading the susceptor and the 4H—SiC substrate with the step into the reaction chamber together while maintaining a temperature of the reaction chamber at the first temperature;
• 4) heating the reaction chamber to a preset process temperature, and reducing a pressure of the reaction chamber to a preset growth pressure at a same time;
• 5) performing in-situ etching on the 4H—SiC substrate with the step while maintaining at the preset process temperature when the temperature of the reaction chamber reaches the preset process temperature;
• 6) filling a growth source gas after the in-situ etching is complete, and growing an epitaxial layer under a C-rich condition to obtain an epitaxial substrate, wherein growing the epitaxial layer under the C-rich condition comprises controlling chemical potential μC of C to maintain a height of the step at ½c, and the ½c is half of a crystalline cell height of 4H—SiC;
• and
• 7) turning off the growth source gas and cooling after growing of the epitaxial layer is complete, and then taking the susceptor and the epitaxial substrate out of the reaction chamber.