H10P 14/2903
Carbon
Official title: {Carbon, e.g. diamond-like carbon}
H10P14/2903 (Carbon) appears on 169 US grants and 203 published applications in this corpus.
Search patents in H10P- Granted patents
- 169
- Published applications
- 203
- Assignees
- 137
- Inventors
- 434
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 4 | 0 |
| 1992 | 2 | 0 |
| 1993 | 2 | 0 |
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 2 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 2 |
| 2006 | 0 | 4 |
| 2007 | 4 | 2 |
| 2008 | 2 | 10 |
| 2009 | 2 | 7 |
| 2010 | 2 | 17 |
| 2011 | 8 | 10 |
| 2012 | 15 | 9 |
| 2013 | 7 | 14 |
| 2014 | 16 | 10 |
| 2015 | 9 | 15 |
| 2016 | 10 | 3 |
| 2017 | 3 | 9 |
| 2018 | 14 | 13 |
| 2019 | 10 | 12 |
| 2020 | 15 | 11 |
| 2021 | 7 | 8 |
| 2022 | 5 | 6 |
| 2023 | 3 | 11 |
| 2024 | 4 | 9 |
| 2025 | 7 | 10 |
| 2026 | 6 | 11 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Composite substrate, manufacturing method thereof, and semiconductor device6 Oct 2026US 12,757,772 B2Enkris Semiconductor, Inc.
- Semiconductor device structure and manufacturing method thereof4 Aug 2026US 12,701,932 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and manufacturing method thereof16 Jun 2026US 12,660,521 B2National Yang Ming.Chiao Tung University
- Method of manufacturing diamond substrate5 May 2026US 12,622,186 B2National University Corporation Saitama University
- Semiconductor structure with diamond heat dissipation and manufacturing method thereof31 Mar 2026US 12,593,689 B2Huawei Technologies Co., Ltd.
- Semiconductor device structure and manufacturing method thereof8 Oct 2026US 2026/0314277 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Substrate for sic semiconductor devices, sic bonded substrate, sic polycrystal substrate, and sic polycrystal substrate manufacturing method6 Aug 2026US 2026/0226655 A1Sumitomo Metal Mining Co., Ltd.
- Method for manufacturing a substrate for an electronic power or radiofrequency device9 Jul 2026US 2026/0198356 A1
- Method for manufacturing polycrystalline silicon carbide suitable for manufacturing substrates for integrated circuits, and silicon carbide obtained in this way18 Jun 2026US 2026/0168133 A1Mersen France Gennevilliers SAS
- Bonding to enhance thermal dissipation for backside power distribution network18 Jun 2026US 2026/0173873 A1International Business Machines Corporation
Most cited
By later US patents
- Low temperature thin films formed from nanocrystal precursors223US 5,262,357 AThe Regents of the University of California · 1993
- Single crystal semiconductor substrate articles and semiconductor devices comprising same65US 5,006,914 AAdvanced Technology Materials, Inc. · 1991
- Method of making single crystal semiconductor substrate articles and semiconductor device52US 5,030,583 AAdvanced Technolgy Materials, Inc. · 1991
- Thin film single crystal substrate45US 5,373,171 ASumitomo Electric Industries, Ltd. · 1994
- Silicon on insulator semiconductor composition containing thin synthetic diamone films43US 5,131,963 ACrystallume · 1992