Single crystal semiconductor substrate articles and semiconductor devices comprising same

A field effect transistor device, comprising:

• a single crystal insulating diamond substrate including a substrate base and a post of square cross-section extending upwardly therefrom and terminating in a post top surface;
• a single crystal epitaxial layer of p-type semiconductor diamond on the post top surface;
• single crystal epitaxial layers of p.sup.+ doped diamond in spaced relationship to one another on the single crystal epitaxial layer of p-type semiconductor diamond;
• ohmic contacts on each of said single crystal epitaxial layers of p.sup.+ doped diamond, forming respective source and drain electrodes;
• and
• a Schottky barrier gate electrode on the single crystal epitaxial layer of p-type semiconductor diamond, between said source and drain electrodes.

A diamond semiconductor substrate article, comprising:

• an insulating diamond substrate including a substrate base and a regular array of post structures extending outwardly from a main top surface thereof, each such post structure comprising (i) a post integral with the substrate base and terminating in an outer surface, (ii) an epitaxial single crystal p-type diamond layer deposited on the post outer surface, and (iii) an epitaxial single crystal p.sup.+ doped diamond layer deposited on the p-type diamond layer;
• the posts having a height of from about 0.5 to about 10 micrometers, and a cross-section dimensional characteristic of from about 0.5 to about 20 micrometers;
• and
• the spacing between adjacent posts being from about 2 to about 5 micrometers, as measured between adjacent facing surfaces of the posts.