Bonding to enhance thermal dissipation for backside power distribution network
AssigneeInternational Business Machines Corporation
InventorsSarabjot Singh, Ruilong Xie, Nicolas Jean Loubet, Joshua Mark Rubin
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AssigneeInternational Business Machines Corporation
InventorsSarabjot Singh, Ruilong Xie, Nicolas Jean Loubet, Joshua Mark Rubin
Estimating the term…
Bonding techniques for thermal management in semiconductor devices having a backside power distribution network are provided. In one aspect, a semiconductor device includes: a first wafer; and a second wafer attached to the first wafer, where the first wafer has a first component of an interface between the first wafer and the second wafer, and the second wafer has a second component of the interface between the first wafer and the second wafer, and where at least one of the first component and the second component of the interface between the first wafer and the second wafer includes dual crystalline and amorphous materials. The first wafer can include a heat source such as a backside power distribution network. A method of fabricating the present semiconductor devices is also provided.
A semiconductor device, comprising:
A semiconductor device, comprising:
A method of forming a semiconductor device, the method comprising:
Dependencies are inferred from the claim text.