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US 12,660,521 B2Granted
Semiconductor structure and manufacturing method thereof
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Yang Ming Chiao Tung University
InventorsChun-Liang Lin, Chenming Hu, Wan-Hsin Chen, Naoya Kawakami
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Abstract
The present disclosure in various embodiments provides a method. In some embodiments of the present disclosure, the method includes forming a transition metal dichalcogenide layer on a substrate; and performing an ion bombardment process on the transition metal dichalcogenide layer, performing an annealing process on the transition metal dichalcogenide layer.
Claims20
A method, comprising:
- forming a transition metal dichalcogenide (TMD) layer on a first substrate;
- forming a source/drain contact over the TMD layer;
- after forming the source/drain contact, performing an ion bombardment process through the source/drain contact to the underlying TMD layer;
- and
- performing an annealing process on the TMD layer.
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A method, comprising:
- forming a TMD on a substrate;
- forming a source/drain contact over the TMD;
- after forming the source/drain contact, bombarding the TMD using Ar plasma;
- after bombarding the TMD, annealing the TMD;
- and
- introducing a precursor on the TMD, the precursor having a same chalcogen element as the TMD.
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A method, comprising:
- forming a TMD layer on a substrate;
- transferring the TMD layer from the substrate onto a wafer, the wafer having a transistor and an interconnect structure over the transistor;
- patterning the TMD layer to form a channel region and source/drain regions on opposite sides of the channel region;
- after patterning the TMD layer, forming a metal layer, as a mask, over the source/drain regions of the TMD layer while exposing the channel region of the TMD layer;
- performing a first ion bombardment process on the exposed channel region of the TMD layer while the source/drain regions remain covered by the metal layer;
- after performing the first ion bombardment process, performing a first annealing process on the TMD layer;
- and
- patterning the TMD layer to form a device element.
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Dependencies are inferred from the claim text.