Back to results
US 5,131,963 AGranted
Silicon on insulator semiconductor composition containing thin synthetic diamone films
AssigneeCrystallume
InventorKramadhati V. Ravi
Life of this patent
Estimating the term…
Abstract
A process is provided for making a semiconductor element comprising a single-crystal layer of silicon on a diamond insulator.
Claims4
A semiconductor element consisting of a semiconductor material supported by a polysilicon substrate, wherein an insulating diamond layer is disposed between said semiconducting material and said polysilicon substrate.
A multilayer semiconductor electronic component consisting of, in order, a substrate, an insulating diamond layer, a silicon layer and a layer comprising islands of semiconductor material separated by diamond insulation.
Dependencies are inferred from the claim text.