Method for manufacturing a substrate for an electronic power or radiofrequency device
OwnerHugo Biardinventor
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Abstract
A method for manufacturing a substrate for an electronic power or radiofrequency device includes: forming a support substrate comprising a deposition of at least one layer of polycrystalline silicon carbide by chemical vapor deposition (CVD) in an atmosphere comprising a mixture of argon and a deposition precursor fluidized in hydrogen, the chemical vapor deposition being carried out under Ar/(Ar+H2) ratio and temperature conditions suitable for forming carbon inclusions in the layer of polycrystalline silicon carbide; and assembling the support substrate and a surface layer made of a monocrystalline material.
Claims20
A method for fabricating a substrate for a radiofrequency or power electronics device, comprising
- forming a support substrate comprising deposition of at least one layer of polycrystalline silicon carbide by chemical vapor deposition (CVD) in an atmosphere comprising a mixture of argon and a deposition precursor that is fluidified in hydrogen, the chemical vapor deposition being carried out under Ar/(Ar+H2) ratio and temperature conditions suitable for forming carbon inclusions in the at least one layer of polycrystalline silicon carbide;
- and
- assembling the support substrate and a surface layer made of a monocrystalline material.
A substrate for a radiofrequency or power electronics device, comprising
- a support substrate made of polycrystalline silicon carbide having a front face and a rear face;
- and
- a surface layer made of monocrystalline material extending over the front face of the support substrate;
- wherein at least a portion of the support substrate comprises a plurality of silicon carbide grains having an elongated shape and oriented in a direction perpendicular to the surface layer of the substrate and a plurality of carbon inclusions located between the grains of the plurality of silicon carbide grains.
Dependencies are inferred from the claim text.