Method for manufacturing polycrystalline silicon carbide suitable for manufacturing substrates for integrated circuits, and silicon carbide obtained in this way

Abstract

The invention relates to a method for manufacturing a plate made of polycrystalline SiC, doped by chemical vapour deposition on a graphite surface, wherein a gas mixture is introduced into a heated chamber so as to create a gas phase comprising: —at least one gaseous precursor of silicon and/or carbon; —at least one dopant gas comprising at least one nitrogen atom; and —a carrier gas, the gas mixture decomposing on the graphite surface to form a layer of polycrystalline SiC, and the method being characterised in that the temperature in the reactor is between 1450 K and 1650 K and the total partial pressure of the gaseous precursors is less than 350 mbar. The plate is characterised in that: (i) the texture coefficient C422 thereof is less than 30%, and (ii.a) the texture coefficient C220 thereof is greater than 60%, or (ii.b) the sum of the texture coefficients C111+C222+C511 is greater than 70%.

Dependencies are inferred from the claim text.