H10P 14/2921
Being crystalline insulating materials
Official title: {being crystalline insulating materials}
H10P14/2921 (Being crystalline insulating materials) appears on 2,425 US grants and 2,498 published applications in this corpus.
Search patents in H10P- Granted patents
- 2,425
- Published applications
- 2,498
- Assignees
- 702
- Inventors
- 3,784
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 5 | 0 |
| 1978 | 9 | 0 |
| 1979 | 6 | 0 |
| 1980 | 3 | 0 |
| 1981 | 2 | 0 |
| 1982 | 3 | 0 |
| 1983 | 8 | 0 |
| 1984 | 7 | 0 |
| 1985 | 9 | 0 |
| 1986 | 9 | 0 |
| 1987 | 11 | 0 |
| 1988 | 5 | 0 |
| 1989 | 20 | 0 |
| 1990 | 8 | 0 |
| 1991 | 17 | 0 |
| 1992 | 21 | 0 |
| 1993 | 16 | 0 |
| 1994 | 20 | 0 |
| 1995 | 16 | 0 |
| 1996 | 14 | 0 |
| 1997 | 14 | 0 |
| 1998 | 29 | 0 |
| 1999 | 39 | 0 |
| 2000 | 36 | 0 |
| 2001 | 57 | 37 |
| 2002 | 69 | 126 |
| 2003 | 98 | 129 |
| 2004 | 106 | 101 |
| 2005 | 91 | 123 |
| 2006 | 94 | 129 |
| 2007 | 80 | 159 |
| 2008 | 83 | 93 |
| 2009 | 101 | 103 |
| 2010 | 99 | 123 |
| 2011 | 91 | 116 |
| 2012 | 104 | 126 |
| 2013 | 94 | 91 |
| 2014 | 112 | 104 |
| 2015 | 90 | 97 |
| 2016 | 99 | 83 |
| 2017 | 74 | 96 |
| 2018 | 73 | 99 |
| 2019 | 94 | 87 |
| 2020 | 77 | 75 |
| 2021 | 66 | 86 |
| 2022 | 56 | 85 |
| 2023 | 39 | 61 |
| 2024 | 63 | 91 |
| 2025 | 51 | 52 |
| 2026 | 34 | 26 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor substrate, method for producing semiconductor substrate, semiconductor substrate production device, electronic component, and electronic device29 Sep 2026US 12,751,219 B2KYOCERA Corporation
- Patterned aluminum nitride composite substrate and preparation method thereof25 Aug 2026US 12,716,146 B2Peking University
- Semiconductor film25 Aug 2026US 12,720,828 B2NGK Insulators, Ltd.
- Group-III element nitride semiconductor substrate25 Aug 2026US 12,721,056 B2NGK Insulators, Ltd.
- Film formation apparatus and film formation method of gallium nitride film16 Jun 2026US 12,655,514 B2Japan Display Inc.
- Ferroelectric iii-nitride heterostructures27 Aug 2026US 2026/0255642 A1The Regents of the University of Michigan
- Relaxed wurtzite ingan layers6 Aug 2026US 2026/0229852 A1Opnovix Corp.
- Uniform And Controllable Silicone Doping Of Aluminum Nitride30 Jul 2026US 2026/0218418 A1The Regents of the University of Michigan
- Crystalline oxide semiconductor film, layered structure, and semiconductor device23 Jul 2026US 2026/0209989 A1Shin-Etsu Chemical Co., Ltd.
- Carrier-Assisted Method for Parting Crystalline Material Along Laser Damage Region23 Jul 2026US 2026/0215174 A1Wolfspeed, Inc.
Most cited
By later US patents
- LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film3,969US 7,323,356 B2Japan Science and Technology Agency · 2008
- Selective growth method, and semiconductor light emitting device and fabrication method thereof734US 6,858,081 B2Sony Corporation · 2005
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000
- Semiconductor light-emitting device and semiconductor light-emitting device486US 7,087,932 B2Sony Corporation · 2006
- Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device465US 7,183,229 B2Sony Corporation · 2007