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US 12,720,828 B2Granted
Semiconductor film
AssigneeNGK Insulators, Ltd.
InventorsMorimichi Watanabe, Hiroshi Fukui
Life of this patent
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Abstract
Provided is a semiconductor film having a corundum-type crystal structure composed of α-Ga2O3 or an α-Ga2O3 solid solution, and an impurity concentration and/or a heterogeneous phase amount differ between a front surface and a rear surface of the semiconductor film.
Claims3
A semiconductor film having a corundum-type crystal structure composed of α-Ga2O3 or an α-Ga2O3 solid solution, wherein an impurity concentration amount differs between a front surface and a rear surface of the semiconductor film, and wherein the impurity concentration has a distribution in the thickness direction in the semiconductor film,
- wherein impurities contained in the semiconductor film include one or more components selected from the group consisting of Cr and Fe, and
- wherein the semiconductor film uniformly contains a Group 14 element as a dopant at a proportion of 1.0×1016 to 1.0×1021/cm3.
Dependencies are inferred from the claim text.