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AssigneeNichia Chemical Industries, Ltd.
InventorsHiroyuki Kiyoku, Shuji Nakamura, Tokuya Kozaki, Naruhito Iwasa, Kazuyuki Chocho
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A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and made of a material different from a nitride semiconductor, the first selective growth mask having a plurality of first windows for selectively exposing the upper surface of the support member, and the step of growing nitride semiconductor portions from the upper surface, of the support member, which is exposed from the windows, by using a gaseous Group 3 element source and a gaseous nitrogen source, until the nitride semiconductor portions grown in the adjacent windows combine with each other on the upper surface of the selective growth mask.
A nitride semiconductor growth method comprising the steps of:
A nitride semiconductor growth method characterized by comprising the steps of forming a nitride semiconductor on a support member including a dissimilar substrate, using said nitride semiconductor as a seed crystal to grow a new nitride semiconductor in substantially only a lateral direction while suppressing growth of the nitride semiconductor in a vertical direction, and then growing the nitride semiconductor in both the vertical and lateral directions, thereby obtaining an integral nitride semiconductor crystal on a substantially entire upper surface of the support member.
Dependencies are inferred from the claim text.