Semiconductor light-emitting device and semiconductor light-emitting device

A semiconductor light-emitting element, comprising:

• a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type;
• a clad layer of a first conduction type formed on the selective crystal growth layer;
• an active layer formed on the selective crystal growth layer;
• and
• a clad layer of a second conduction type formed on the selective crystal growth layer;
• wherein the active layer is formed of at least a ternary mixed crystal material such that a diffusion length of an atom constituting part of the mixed crystal material is shorter than an extending length of the active layer, so that first and second light-emitting wavelength regions, whose respective light-emitting wavelengths are different from each other, are formed in the active layer and are arranged such that an electric current is chargeable into both the first and the second light-emitting wavelength regions.

A semiconductor light-emitting element, comprising:

• a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type;
• a clad layer of a first conduction type formed on the selective crystal growth layer;
• an active layer formed on the selective crystal growth layer;
• and
• a clad layer of a second conduction type formed on the selective crystal growth layer;
• wherein first and second light-emitting wavelength regions, which have respectively different light-emitting wavelengths due to a difference in at least one of a respective composition and a thickness thereof, are formed in the active layer and are arranged such that an electric current is chargeable into both the first and the second light-emitting wavelength regions.

A semiconductor light-emitting device, comprising:

• a substrate;
• a plurality of selective crystal growth layers formed by selectively growing a compound semiconductor of a Wurtzite type on the substrate;
• a clad layer of a first conduction type formed on each of the plurality of selective crystal growth layers;
• an active layer formed on each of the plurality of selective crystal growth layers;
• and
• a clad layer of a second conduction type formed on each of the plurality of selective crystal growth layers;
• wherein at least two light emission groups, each consisting of the plurality of selective crystal growth layers that are at least similar to each other with respect to a shape element thereof, are formed on the substrate and have respective light-emitting wavelengths different from each other due to a difference in their respective shape element.

An image display device including, as a pixel, a semiconductor light-emitting element, the element comprising:

• a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type;
• a clad layer of a first conduction type formed on the selective crystal growth layer;
• an active layer formed on the selective crystal growth layer;
• and
• a clad layer of a second conduction type formed on the selective crystal growth layer;
• wherein at least part of the active layer extends in parallel to different crystal planes, and first and second light-emitting wavelength regions, whose respective light-emitting wavelengths are different from each other, are formed in the active layer and are arranged such that an electric current is chargeable into both the first and the second light-emitting wavelength regions.

An illumination device including a plurality of semiconductor light-emitting elements in array, each element comprising:

• a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type;
• a clad layer of a first conduction type formed on the selective crystal growth layer;
• an active layer formed on the selective crystal growth layer;
• and
• a clad layer of a second conduction type formed on the selective crystal growth layer;
• wherein at least part of the active layer extends in parallel to different crystal planes, and first and second light-emitting wavelength regions, whose respective light-emitting wavelengths are different from each other, are formed in the active layer and are arranged such that an electric current is chargeable into both the first and the second light-emitting wavelength regions.

An image display device including, as a pixel, a semiconductor light-emitting element, the element comprising:

• a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type;
• a clad layer of a first conduction type formed on the selective crystal growth layer;
• an active layer formed on the selective crystal growth layer;
• and
• a clad layer of a second conduction type formed on the selective crystal growth layer;
• wherein the active layer is formed of at least a ternary mixed crystal material such that a diffusion length of an atom constituting part of the mixed crystal material is shorter than an extending length of the active layer, so that first and second light-emitting wavelength regions, whose respective light-emitting wavelengths are different from each other, are formed in the active layer and are arranged such that an electric current is chargeable into both the first and the second light-emitting wavelength regions.

An illumination device including a plurality of semiconductor light-emitting elements in array, each element comprising:

• a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type;
• a clad layer of a first conduction type formed on the selective crystal growth layer;
• an active layer formed on the selective crystal growth layer;
• and
• a clad layer of a second conduction type formed on the selective crystal growth layer;
• wherein the active layer is formed of at least a ternary mixed crystal material such that a diffusion length of an atom constituting part of the mixed crystal material is shorter than an extending length of the active layer, so that first and second light-emitting wavelength regions, whose respective light-emitting wavelengths are different from each other, are formed in the active layer and are arranged such that an electric current is chargeable into both the first and the second light-emitting wavelength regions.

An image display device including, as a pixel, a semiconductor light-emitting element, the element comprising:

• a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type;
• a clad layer of a first conduction type formed on the selective crystal growth layer;
• an active layer formed on the selective crystal growth layer;
• and
• a clad layer of a second conduction type formed on the selective crystal growth layer;
• wherein first and second light-emitting wavelength regions, which have respectively different light-emitting wavelengths due to a difference in at least one of a respective composition and a thickness thereof, are formed in the active layer and are arranged such that an electric current is chargeable into both the first and the second light-emitting wavelength regions.

An illumination device including a plurality of semiconductor light-emitting elements in array, each element comprising:

• a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type;
• a clad layer of a first conduction type formed on the selective crystal growth layer;
• an active layer formed on the selective crystal growth layer;
• and
• a clad layer of a second conduction type formed on the selective crystal growth layer;
• wherein first and second light-emitting wavelength regions, which have respectively different light-emitting wavelengths due to a difference in at least one of a respective composition and a thickness thereof, are formed in the active layer and are arranged such that an electric current is chargeable into both the first and the second light-emitting wavelength regions.

An image display device including, as a pixel, a semiconductor light-emitting device, the light emitting device comprising:

• a substrate;
• a plurality of selective crystal growth layers formed by selectively growing a compound semiconductor of a Wurtzite type on the substrate;
• a clad layer of a first conduction type formed on each of the plurality of selective crystal growth layers;
• an active layer formed on each of the plurality of selective crystal growth layers;
• and
• a clad layer of a second conduction type formed on each of the plurality of selective crystal growth layers;
• wherein at least two light emission groups, each consisting of the plurality of selective crystal growth layers that are at least similar to each other with respect to a shape element thereof, are formed on the substrate and have respective light-emitting wavelengths different from each other due to a difference in their respective shape element.

An illumination device including a plurality of semiconductor light-emitting devices in array, each light-emitting device comprising:

• a substrate;
• a plurality of selective crystal growth layers formed by selectively growing a compound semiconductor of a Wurtzite type on the substrate;
• a clad layer of a first conduction type formed on each of the plurality of selective crystal growth layers;
• an active layer formed on each of the plurality of selective crystal growth layers;
• and
• a clad layer of a second conduction type formed on each of the plurality of selective crystal growth layers;
• wherein at least two light emission groups, each consisting of the plurality of selective crystal growth layers that are at least similar to each other with respect to a shape element thereof, are formed on the substrate and have respective light-emitting wavelengths different from each other due to a difference in their respective shape element.