H10P 14/2919
Being chalcogenide semiconducting materials not being oxides
Official title: {being chalcogenide semiconducting materials not being oxides, e.g. ternary compounds}
H10P14/2919 (Being chalcogenide semiconducting materials not being oxides) appears on 45 US grants and 46 published applications in this corpus.
Search patents in H10P- Granted patents
- 45
- Published applications
- 46
- Assignees
- 38
- Inventors
- 155
- Latest grant
- 3 Feb 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 3 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 1 |
| 2007 | 1 | 0 |
| 2008 | 0 | 2 |
| 2009 | 1 | 1 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 1 | 0 |
| 2013 | 0 | 1 |
| 2014 | 1 | 2 |
| 2015 | 1 | 1 |
| 2016 | 2 | 4 |
| 2017 | 1 | 3 |
| 2018 | 4 | 3 |
| 2019 | 3 | 4 |
| 2020 | 5 | 8 |
| 2021 | 2 | 6 |
| 2022 | 5 | 4 |
| 2023 | 5 | 1 |
| 2024 | 3 | 3 |
| 2025 | 3 | 1 |
| 2026 | 1 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Vapor deposition of tellurium nanomesh electronics on arbitrary surfaces at low temperature3 Feb 2026US 12,543,518 B2City University of Hong Kong
- Dislocation free semiconductor nanostructures grown by pulse laser deposition with no seeding or catalyst23 Sep 2025US 12,426,406 B2King Abdullah University of Science and Technology
- Method for controlling surface characteristics and thickness of multilayer transition metal dichalcogenide thin film20 May 2025US 12,308,231 B1Industry-Academic Cooperation Foundation Gyeongsang National University
- Heterostructure semiconductor, chemiresistive gas sensor made thereof, and method of fabrication thereof1 Apr 2025US 12,265,046 B2Indian Institute of Science
- Two-dimensional material-based wiring conductive layer contact structures, electronic devices including the same, and methods of manufacturing the electronic devices12 Nov 2024US 12,142,697 B2Samsung Electronics Co., Ltd.
- I-iii-vi based quantum dots and fabrication method thereof12 Mar 2026US 2026/0075979 A1Hongik University Industry-Academia Cooperation Foundation
- Method for controlling surface characteristics and thickness of multilayer transition metal dichalcogenide thin film22 May 2025US 2025/0166992 A1Industry-Academic Cooperation Foundation Gyeongsang National University
- Method for manufacturing crystallized laminated structure5 Dec 2024US 2024/0401224 A1National Institute of Advanced Industrial Science and Technology
- Vapor deposition of tellurium nanomesh electronics on arbitrary surfaces at low temperature7 Mar 2024US 2024/0079234 A1City University of Hong Kong
- Two-dimensional material-based wiring conductive layer contact structures, electronic devices including the same, and methods of manufacturing the electronic devices1 Feb 2024US 2024/0038903 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Optoelectronic device containing at least one active device layer having a wurtzite crystal structure, and methods of making same88US 9,431,794 B2VerLASE Technologies LLC · 2016
- Optoelectronic device containing at least one active device layer having a wurtzite crystal structure, and methods of making same86US 8,859,412 B2VerLASE Technologies LLC · 2014
- Method of growing epitaxial semiconductor films utilizing radiant heating48US 4,115,163 A1978
- Group II-VI compound semiconductor light emitting devices and an ohmic contact therefor19US 5,548,137 AResearch Corporation Technologies, Inc. · 1996
- Group II-VI compound semiconductor light emitting devices and an ohmic contact therefor16US 5,610,413 AResearch Corporation Technologies, Inc. · 1997