Heterostructure semiconductor, chemiresistive gas sensor made thereof, and method of fabrication thereof

A method for fabrication of a heterostructure semiconductor for sensing a gas, the method comprising:

• obtaining a substrate, wherein the substrate is made of nanosheets of a compound of a first metal, wherein the compound of the first metal is sensitive to the gas to be sensed;
• obtaining a solution of a precursor of 1D components to be formed on the substrate, wherein the 1D components are made of a compound of a second metal, wherein the compound of the second metal is selective to the gas to be sensed;
• contacting the solution of the precursor of the 1D component with the substrate to obtain a first mixture;
• and
• irradiating the first mixture with microwaves to form the heterostructure comprising one or more of the 1-Dimensional (1D) components fabricated on a surface of the substrate and a 2-Dimensional (2D) layer formed on the surface of the substrate in portions excluding the one or more of the 1-Dimensional (1D) components, wherein the 2D layer comprises compounds of the first and second metal.