US 12,426,406 B2 · Dislocation free semiconductor nanostructures grown by pulse laser deposition with no seeding or catalyst

Abstract

There is a method for forming a semiconductor nanostructure on a substrate. The method includes placing a substrate and a semiconductor material in a pulsed laser deposition chamber; selecting parameters including a fluence of a laser beam, a pressure P inside the chamber, a temperature T of the substrate, a distance d between the semiconductor material and the substrate, and a gas molecule diameter a0 of a gas to be placed inside the chamber so that conditions for a Stranski-Krastanov nucleation are created; and applying the laser beam with the selected fluence to the semiconductor material to form a plume of the semiconductor material. The selected parameters determine the formation, from the plume, of (1) a nanolayer that covers the substrate, (2) a polycrystalline wetting layer over the nanolayer, and (3) a single-crystal nanofeature over the polycrystalline wetting layer, and the single-crystal nanofeature is grown free of any catalyst or seeding layer.

Claims21

Dependent claims

A method for forming a semiconductor nanostructure on a substrate, the method comprising:

placing a substrate and a semiconductor material in a pulsed laser deposition chamber, wherein the semiconductor material is a III-nitride material;
selecting parameters including a fluence of a laser beam, a pressure P inside the chamber, a temperature T of the substrate, a distance d between the semiconductor material and the substrate, and a gas molecule diameter a0 of a gas to be placed inside the chamber so that conditions for a Stranski-Krastanov nucleation are created;
and
applying the laser beam with the selected fluence to the semiconductor material to form a plume of the semiconductor material,
wherein the selected parameters determine the formation, from the plume, of (1) a nanolayer, free of metal, that covers the substrate, (2) a polycrystalline wetting layer over the nanolayer, and (3) a single-crystal nanofeature over the polycrystalline wetting layer,
wherein the single-crystal nanofeature is grown free of any catalyst and seeding layer, and
wherein the single-crystal nanofeature is made of the III-nitride material.

4 more elements

A semiconductor device, comprising:

a substrate;
a nanolayer including oxygen (O), hydrogen (H), and carbon (C) atom impurities, and the nanolayer is located directly on the substrate, the nanolayer being free of metal;
a semiconductor, polycrystalline, wetting layer arranged on the nanolayer;
and
semiconductor, single-crystal nanowires arranged directly on the semiconductor, polycrystalline, wetting layer,
wherein the semiconductor, single-crystal nanowires are free of threading dislocations, and
wherein a material of the semiconductor, polycrystalline, wetting layer and the semiconductor, single-crystal nanowires is a III-nitride material.

4 more elements

Dependencies are inferred from the claim text.

Dislocation free semiconductor nanostructures grown by pulse laser deposition with no seeding or catalyst

Life of this patent

Dislocation free semiconductor nanostructures grown by pulse laser deposition with no seeding or catalyst

Life of this patent

Abstract

Claims21