Vapor deposition of tellurium nanomesh electronics on arbitrary surfaces at low temperature
AssigneeCity University of Hong Kong
InventorsJohnny Chung Yin Ho, You Meng, Wei Wang, Weijun Wang
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Abstract
A method of fabricating semiconducting tellurium (Te) nanomesh. The method includes the steps of preparing a substrate, vaporizing Te powders under a first temperature; and growing Te nanomesh on the substrate using the vaporized Te powders under a second temperature. The first temperature is higher than the second temperature. The rationally designed nanomesh exhibits exciting properties, such as micrometer-level patterning capacity, excellent field-effect hole mobility, fast photoresponse in the optical communication region, and controllable electronic structure of the mixed-dimensional heterojunctions.
Claims11
A method of growing semiconducting tellurium (Te) nanomesh, comprising the steps of:
- a) preparing a substrate;
- b) vaporizing Te powders under a first temperature;
- and
- c) growing Te nanomesh on the substrate using the vaporized Te powders under a second temperature;
- a growth of the Te nanomesh involving multi-scale van der Waals (vdWs) interactions of Te molecules;
- the multi-scale vdWs interactions comprising macroscale quasi-vdWs interactions with spontaneous misfit relaxation to the substrate, and nanoscale vdWs interactions among Te atomic chains;
- wherein the first temperature is higher than the second temperature.
Dependencies are inferred from the claim text.