Method for controlling surface characteristics and thickness of multilayer transition metal dichalcogenide thin film

A method for controlling a thickness of a multilayer transition metal dichalcogenide thin film, comprising:

• step (S100) of forming the multilayer transition metal dichalcogenide thin film on a substrate using a transition metal chalcogenide;
• step (S200) of forming an amorphous transition metal oxide thin film on the multilayer transition metal dichalcogenide thin film by allowing oxygen atoms to penetrate into crystals of the multilayer transition metal dichalcogenide thin film;
• step (S300) of subjecting the multilayer transition metal dichalcogenide thin film, which has the amorphous transition metal oxide thin film formed thereon, to a first treatment with an aqueous ammonium sulfide solution, whereby all of the amorphous transition metal oxide thin film and at least a portion of the multilayer transition metal dichalcogenide thin film are removed, and a portion of oxygen atoms penetrate into crystals of the multilayer transition metal dichalcogenide thin film during the first treatment to form a multilayer transition metal dichalcogenide thin film subjected to the first treatment;
• and
• step (S400) of subjecting the multilayer transition metal dichalcogenide thin film, subjected to the first treatment, to a second treatment with the aqueous ammonium sulfide solution, thereby removing at least a portion of the multilayer transition metal dichalcogenide thin film subjected to the first treatment.