I-iii-vi based quantum dots and fabrication method thereof
AssigneeHongik University Industry-Academia Cooperation Foundation
InventorsHee-Sun YANG, Yuri KIM
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Abstract
There are provided I-III-VI based quantum dots added with Cu with narrow full width at half maximum for use as display materials and a method for fabricating the same. The quantum dots according to the present disclosure include a core including Cu, Group 13 element and Group 16 element; and a shell on the core, wherein the core optionally further includes Group 11 element other than the Cu, and wherein the quantum dots exhibit band-edge emission in a visible light region and an infrared region.
Claims18
Quantum dots, comprising:
- a core including Cu, Group 13 element and Group 16 element;
- and
- a shell on the core,
- wherein the core optionally further includes Group 11 element other than the Cu, and
- wherein the quantum dots exhibit band-edge emission in a visible light region and an infrared region.
Quantum dots comprising:
- a core/an inner shell/an outer shell,
- wherein the core is (Cux,Ag(1-x)—(Iny,Ga(1-y))—(Sz,Se(1-z)),
- wherein the inner shell is GaSwSe(1-w),
- wherein the outer shell is ZnStSe(l-t), and
- wherein 0<x≤1, 0≤y<1, 0<z≤1, 0≤w≤1, 0≤t≤1.
A method for fabricating quantum dots, comprising the steps of:
- (a) synthesizing a primary core including Group 11 element other than Cu, Group 13 element and Group 16 element;
- (b) synthesizing a secondary core by adding Cu to the primary core through cation exchange;
- and
- (c) forming a shell on the secondary core.
Dependencies are inferred from the claim text.