Method for controlling surface characteristics and thickness of multilayer transition metal dichalcogenide thin film
AssigneeIndustry-Academic Cooperation Foundation Gyeongsang National University
InventorsJun Hong Park, Chang Hwan Oh
Life of this patent
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Abstract
An embodiment relates to a method for controlling the surface characteristics and thickness of a multilayer transition metal dichalcogenide thin film. By forming an amorphous transition metal oxide thin film on a multilayer transition metal dichalcogenide thin film, and then treating the multilayer transition metal dichalcogenide thin film having the amorphous transition metal oxide thin film formed thereon with an aqueous solution of ammonium sulfide at least once, the surface characteristics and thickness of the transition metal dichalcogenide can be controlled in a simple and low-cost manner without complex equipment settings for heat treatment, plasma and laser etching, and so on.
Claims14
A method for controlling surface properties of a multilayer transition metal dichalcogenide thin film, comprising:
- step (S10) of forming the multilayer transition metal dichalcogenide thin film on a substrate using a transition metal chalcogenide;
- step (S20) of forming an amorphous transition metal oxide thin film on the multilayer transition metal dichalcogenide thin film by allowing oxygen atoms to penetrate into crystals of the multilayer transition metal dichalcogenide thin film;
- and
- step (S30) of etching a portion of the amorphous transition metal oxide thin film by treating the multilayer transition metal dichalcogenide thin film, which has the amorphous transition metal oxide thin film formed thereon, with an aqueous ammonium sulfide solution,
- wherein, after step S30, the remaining portion of the amorphous transition metal oxide thin film and the multilayer transition metal dichalcogenide thin film form a heterojunction.
A method for controlling a thickness of a multilayer transition metal dichalcogenide thin film, comprising:
- step (S100) of forming the multilayer transition metal dichalcogenide thin film on a substrate using a transition metal chalcogenide;
- step (S200) of forming an amorphous transition metal oxide thin film on the multilayer transition metal dichalcogenide thin film by allowing oxygen atoms to penetrate into crystals of the multilayer transition metal dichalcogenide thin film;
- step (S300) of subjecting the multilayer transition metal dichalcogenide thin film, which has the amorphous transition metal oxide thin film formed thereon, to a first treatment with an aqueous ammonium sulfide solution, whereby all of the amorphous transition metal oxide thin film and at least a portion of the multilayer transition metal dichalcogenide thin film are removed, and a portion of oxygen atoms penetrate into crystals of the multilayer transition metal dichalcogenide thin film during the first treatment to form a multilayer transition metal dichalcogenide thin film subjected to the first treatment;
- and
- step (S400) of subjecting the multilayer transition metal dichalcogenide thin film, subjected to the first treatment, to a second treatment with the aqueous ammonium sulfide solution, thereby removing at least a portion of the multilayer transition metal dichalcogenide thin film subjected to the first treatment.
Dependencies are inferred from the claim text.