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US 7,049,190 B2Granted
Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
AssigneeSanyo Electric Co., Ltd.
InventorsKatsutoshi Takeda, Masao Isomura
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Abstract
A ZnO buffer layer having an electric conductivity of 1×10−9 S/cm or lower or alternatively a ZnO buffer layer having a diffraction peak of a crystal face other than (002) and (004) in X-ray diffraction is formed on a substrate by sputtering. A ZnO semiconductor layer is formed on the ZnO buffer layer. The ZnO semiconductor layer is formed under the condition that the flow rate ratio of an oxygen gas in a sputtering gas is lower than that in the formation of the ZnO buffer layer.
Claims4
A method for fabricating a semiconductor device, comprising the steps of:
- using a non-doped ZnO target and forming a first ZnO film on a substrate by sputtering with a sputtering gas containing oxygen and also forming a second ZnO film on the first ZnO film by sputtering with the flow rate ratio of the oxygen gas in the sputtering gas being decreased continuously;
- forming a groove dividing the second ZnO film;
- providing a gate electrode over the groove via an insulating layer;
- and
- providing, on the second ZnO film, a source electrode and a drain electrode facing each other with the groove therebetween.
2 more elements
Dependencies are inferred from the claim text.