H10P 14/2923
Being conductive materials
Official title: {being conductive materials, e.g. metallic silicides}
H10P14/2923 (Being conductive materials) appears on 539 US grants and 533 published applications in this corpus.
Search patents in H10P- Granted patents
- 539
- Published applications
- 533
- Assignees
- 264
- Inventors
- 1,145
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 2 | 0 |
| 1978 | 4 | 0 |
| 1979 | 1 | 0 |
| 1980 | 3 | 0 |
| 1981 | 5 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 5 | 0 |
| 1985 | 12 | 0 |
| 1986 | 10 | 0 |
| 1987 | 17 | 0 |
| 1988 | 13 | 0 |
| 1989 | 17 | 0 |
| 1990 | 3 | 0 |
| 1991 | 7 | 0 |
| 1992 | 5 | 0 |
| 1993 | 7 | 0 |
| 1994 | 5 | 0 |
| 1995 | 2 | 0 |
| 1996 | 5 | 0 |
| 1997 | 1 | 0 |
| 1998 | 4 | 0 |
| 1999 | 5 | 0 |
| 2000 | 5 | 0 |
| 2001 | 8 | 1 |
| 2002 | 5 | 17 |
| 2003 | 8 | 30 |
| 2004 | 14 | 18 |
| 2005 | 17 | 23 |
| 2006 | 18 | 28 |
| 2007 | 15 | 39 |
| 2008 | 15 | 19 |
| 2009 | 29 | 13 |
| 2010 | 23 | 33 |
| 2011 | 20 | 32 |
| 2012 | 14 | 24 |
| 2013 | 22 | 28 |
| 2014 | 23 | 30 |
| 2015 | 24 | 28 |
| 2016 | 20 | 23 |
| 2017 | 19 | 16 |
| 2018 | 11 | 21 |
| 2019 | 17 | 24 |
| 2020 | 15 | 23 |
| 2021 | 13 | 15 |
| 2022 | 11 | 14 |
| 2023 | 11 | 12 |
| 2024 | 10 | 9 |
| 2025 | 7 | 10 |
| 2026 | 8 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of manufacturing semiconductor devices including a cap insulating layer11 Aug 2026US 12,707,905 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Field-programmable ferro-diodes for reconfigurable in-memory-computing7 Apr 2026US 12,597,456 B2The Trustees of the University of Pennsylvania
- Laser induced forward transfer of 2D materials31 Mar 2026US 12,590,372 B2Bar-Ilan University
- Process for manufacturing a silicon carbide device and silicon carbide device31 Mar 2026US 12,593,630 B2STMicroelectronics S,r.l.
- Semiconductor device including dual damascene structure and method for fabricating the same24 Mar 2026US 12,588,441 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including damascene structure, and method for fabricating the same18 Jun 2026US 2026/0173780 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Underlying substrate, single crystal diamond laminate substrate and method for producing them5 Mar 2026US 2026/0068551 A1Shin-Etsu Chemical Co., Ltd.
- Selective passivation and selective deposition26 Feb 2026US 2026/0060014 A1ASM IP Holding B. V.
- Nickel substrate, and method for producing diamond substrate using the same18 Dec 2025US 2025/0382723 A1National University Corporation Kanazawa University
- Single crystal semiconductor structure and method of manufacturing the same4 Dec 2025US 2025/0374626 A1iBeam Materials, Inc.
Most cited
By later US patents
- Method for producing an electronic device having a multi-layer structure496US 4,771,015 ACanon Kabushiki Kaisha · 1988
- Film formation apparatus488US 8,945,339 B2Tokyo Electron Limited · 2015
- Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device465US 7,183,229 B2Sony Corporation · 2007
- Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers382US 5,751,018 AThe Regents of the University of California · 1998
- Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process284US 4,226,898 AEnergy Conversion Devices, Inc. · 1980