Process for manufacturing a silicon carbide device and silicon carbide device

A method for manufacturing a silicon carbide device, the method comprising:

• forming a multilayer on a first surface of a silicon carbide body opposite a second surface along a first direction, the second surface including a plurality of metal connection regions that are separated from each other by a plurality of spaces;
• and
• forming first and second passivation structures overlapping a first and second metal connection region of the plurality of metal connection regions along the first direction, the first and second passivation structures being separated by at least one of the plurality of spaces, each passivation structure having a first portion directly on the second surface of the silicon carbide body and a second portion separated from the second surface by the respective first or second metal connection region, the first portion being a first distance from the second surface and the second portion being a second distance from the second surface equal to the first distance, the multilayer including a first layer having a first metal material and a second layer having a second metal material different from the first metal material, the first metal material being nickel or a nickel alloy;
• and
• annealing the multilayer.

A method comprising:

• forming a multilayer on a first surface of a substrate opposite a second surface, the second surface including a plurality of metal connection regions and a passivation layer partially covering at least two of the plurality of metal connection regions, the passivation layer having a first gap entirely exposing at least one of the plurality of metal connection regions, the forming a multilayer including:
• forming a first contact layer of a first metal on the first surface of the substrate;
• and
• forming a second contact layer of a second metal different than the first metal on the first contact layer;
• forming a mixed silicide layer by annealing the multilayer;
• and
• forming a conductive layer by etching the mixed silicide layer.