Film formation apparatus
AssigneeTokyo Electron Limited
InventorsAkinobu Kakimoto, Katsuhiko Komori, Kazuhide Hasebe
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Abstract
A film formation apparatus includes a gas supply mechanism for supplying an aminosilane-based gas, and a silane-based gas that does not include an amino group. Processes of forming a seed layer on a surface of the insulation film having the opening reaching the conductive substance and on a bottom surface of the opening by supplying the aminosilane-based gas into the process chamber, and forming a silicon film on the seed layer by supplying the silane-based gas that does not include the amino group into the process chamber, are sequentially performed in the process chamber.
Claims8
A film formation apparatus comprising:
- a process chamber which holds an object to be processed having an insulation film provided on a conductive substance, the insulation film having an opening reaching the conductive substance;
- a gas supply mechanism which is provided in the process chamber and supplies an aminosilane-based gas, and a silane-based gas that does not include an amino group;
- and
- a controller which is configured to control the gas supply mechanism such that a process of 1) and a process of 2) are performed sequentially in the process chamber,
- wherein the process of 1) forms a seed layer on a surface of the insulation film having the opening reaching the conductive substance and on a bottom surface of the opening by supplying the aminosilane-based gas into the process chamber, and the process of 2) forms a silicon film on the seed layer by supplying the silane-based gas that does not include the amino group into the process chamber.
Dependencies are inferred from the claim text.