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AssigneeThe Trustees of the University of Pennsylvania
InventorsDeep Jariwala, Roy H. Olsson, III, Eric Andrew Stach, Xiwen Liu, Dixiong Wang, Jeffrey Zheng, Merrilyn Mercy Adzo Fiagbenu
Estimating the term…
Ferroelectric diodes comprising materials such as aluminum scandium nitride (AlScN) or hafnium zirconium oxide (HfZrO2) may be formed atop semiconductor structures such as CMOS wafers to create storage memory cells, search Ternary Content Addressable Memory (TCAM) cells, and/neural circuitry. The diodes are non-volatile and field programmable via pulsing to a pulse-number-dependent analog state, with high on/off and self-rectifying ratios. Cells may be formed, for example, with two diodes that are oppositely polarized, and may be achieved without transistors to form, for example, 0T-2R structures.
A memory cell, comprising an array of ferroelectric diodes, wherein the ferroelectric diodes comprise doped aluminum nitride (AlN), and wherein the ferroelectric diodes are non-volatile and field programmable via pulsing to a pulse-number-dependent analog state, and wherein the ferroelectric diodes have a self-rectifying ratio greater than 25.
A Ternary Content Addressable Memory (TCAM), comprising an array of ferroelectric diodes, wherein the ferroelectric diodes comprise hafnium zirconium oxide (HfZrO2), and wherein the ferroelectric diodes are characterized as non-volatile and field programmable via pulsing to a pulse-number-dependent analog state, and wherein the ferroelectric diodes have a self-rectifying ratio greater than 25.
A neural network, comprising an array of multi-bit diode synapses, wherein each multi-bit diode synapse comprises a ferroelectric diode comprising doped aluminum nitride (AlN), and wherein each ferroelectric diode is non-volatile and field programmable via pulsing to a pulse-number-dependent analog state, wherein the ferroelectric diode has search delay of less than about 1 μs.
Dependencies are inferred from the claim text.