Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device
AssigneeMurata Manufacturing Co., Ltd.
InventorsYoshihiro Ito, Michio Kadota
Life of this patent
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Abstract
A semiconductor device having excellent crystallinity and excellent electric characteristics includes a ZnO thin film having excellent surface smoothness. ZnO-based thin films (an n-type contact layer, an n-type clad layer, an active layer, a p-type clad layer, and a p-type contact layer) primarily including ZnO are formed sequentially by an ECR sputtering method or other suitable method on a zinc-polar surface of a ZnO substrate. A transparent electrode and a p-side electrode are formed by an evaporation method or other suitable method on a surface of the p-type contact layer, and an n-side electrode is formed on an oxygen-polar surface of the ZnO substrate.
Claims9
A semiconductor device comprising:
- a single crystal substrate primarily including zinc oxide and having a zinc-polar surface and an oxygen-polar surface;
- and
- at least one layer of thin film primarily including zinc oxide disposed on the zinc-polar surface;
- wherein
- the at least one layer of thin film includes a multilayer film and the multilayer film defines a light-emitting layer;
- the multilayer film includes an n-type contact layer, an n-type clad layer, an active layer, a p-type clad layer and a p-type contact layer;
- and
- the n-type contact layer is a zinc oxide layer that is in contact with the zinc-polar surface of the single crystal substrate.
A method for manufacturing a semiconductor device, comprising the steps of:
- determining whether a surface of a single crystal substrate primarily including zinc oxide is a zinc-polar surface or an oxygen-polar surface;
- and
- forming at least one layer of thin film primarily including zinc oxide on the zinc-polar surface;
- wherein
- the at least one layer of thin film includes a multilayer film and the multilayer film defines a light-emitting layer;
- the multilayer film includes an n-type contact layer, an n-type clad layer, an active layer, a p-type clad layer and a p-type contact layer;
- and
- the n-type contact layer is a zinc oxide layer that is in contact with the zinc-polar surface of the single crystal substrate.
Dependencies are inferred from the claim text.